SBIR Phase I: Millimeter Wave Transceivers on Large Metamorphic Wafers

这个小企业创新研究（SBIR）第一阶段项目将利用创新的高输出紫外（UV）光刻0.25 mm t栅极制造工艺，开发6英寸基板上的毫米波单片集成电路（MMIC）收发器的高产量和高吞吐量制造。这一努力将集中在(1)开发高质量的6英寸变质晶圆，以实现高电路成品率；(2)演示使用0.25 mm t栅极（非e波束）工艺的变质场效应晶体管（FET），(3)选择关键的MMIC组合以实现高性能收发器功能。这些目标的成功完成将成为结合经过验证的mmic用于设计和制造ka波段和e波段收发器的基础。MMIC技术市场在电信（包括基于雷达的系统）应用方面显示出巨大的潜力。单功能MMIC设计需要昂贵的加工和包装。这一努力将为100亿美元的MMIC市场带来更低成本的收发器。

This Small Business Innovation Research (SBIR) Phase I project will utilize an innovative high output ultraviolet (UV) lithography 0.25 mm T-gate fabrication process to develop high yield and high throughput manufacturing of millimeter-wave monolithic integrated circuit (MMIC) transceivers on 6" substrates. This effort will focus on (1) developing high quality 6" metamorphic wafers for high circuit yield; (2) demonstrate a metamorphic field-effect transistor (FET) using a 0.25 mm T-gate (non-E beam) process, (3) select the key MMIC to combine for high performance transceiver functionality. Successful completing of these objectives will serve as the basis for combining proven MMICs for the design and fabrication of Ka-band and E-Band transceivers. The MMIC technology market has shown great potential for applications in telecommunications (including radar-based systems). Single function MMIC designs require expensive machining and packaging. This effort should to a lower-cost transceiver for the $10 billion MMIC market.