Electronic Properties of Molecules and Oxide Layers on Silicon
Electronic Properties of Molecules and Oxide Layers on Silicon
批准号:
0316223
负责人:
Douglas Doren
金额:
$39.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-07-01 至 2007-06-30
中文摘要
特拉华大学的Doug Doren在理论和计算化学项目的支持下,开发和应用理论工具,以探索硅表面分子和介电层的电子特性。他将使用量子化学方法来预测结构、电荷密度、能级和电子传输性质。他将专注于共价附着在半导体上的有机分子的导电性,以及硅上的超薄氧化物介电材料层。研究目标是为基于混合分子/半导体材料的新型器件奠定基础,并了解介电/半导体接口的特性,以便近期在微电子领域中使用。
英文摘要
Doug Doren of the University of Delaware is supported by the Theoretical and Computational Chemistry Program to develop and apply theoretical tools in order to explore the electronic properties of molecules and dielectric layers on silicon surfaces. He will use quantum chemistry methods to predict structures, charge densities, energy levels, and electron transport properties. He will focus on the conductivity of organic molecules covalently attached to semiconductors, and ultrathin layers of oxide dielectric materials on silicon.The research goals are to develop the foundations for fundamentally new types of devices based on hybrid molecular/semiconductor materials and to understand the properties of dielectric/semiconductor interfaces for near-term use in microelectronics.
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会议论文
MRI: Acquisition of a Facility for Computational Approaches to Molecular-Scale Problems
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批准号:0922657
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项目类别:Standard Grant
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资助金额:$45.11万
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财政年份:2009
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负责人:Douglas Doren
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依托单位:
Theory of Semiconductor Surface Chemistry
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批准号:9971241
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项目类别:Continuing Grant
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资助金额:$35.1万
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财政年份:1999
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负责人:Douglas Doren
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依托单位:
Theory of Semiconductor Surface Chemistry
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批准号:9708363
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项目类别:Standard Grant
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资助金额:$18.96万
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财政年份:1997
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负责人:Douglas Doren
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依托单位:
Theory of Silicon Hydride Surface Chemistry
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批准号:9401312
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项目类别:Continuing Grant
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资助金额:$23.0万
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财政年份:1994
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负责人:Douglas Doren
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依托单位:
Dynamics and Interactions of Molecules on Surfaces
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批准号:9015368
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项目类别:Standard Grant
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资助金额:$8.4万
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财政年份:1990
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负责人:Douglas Doren
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依托单位:
海外基金