US-India Cooperative Research: Investigating Metal Induced Crystallization on Thin Films of Amorphous Silicon

该奖项支持美印合作研究项目“研究非晶硅薄膜上的金属诱导结晶”。阿肯色大学的Hameed Naseem教授和新德里国家物理实验室（NPL）的Ram Kishore教授将使用表征技术，包括电子显微镜，研究低温，铝诱导非晶硅的固相结晶。他们期望提高对结晶动力学等基础科学的基本理解。合作范围：合作者将利用阿肯色大学在薄膜加工方面的优势和国家物理实验室在电子显微镜方面的优势，研究与非晶硅结晶行为相关的实时成核和生长机制。他们期望开发新技术，以减少特定最终产品所需的能源和材料数量，并扩大低成本材料的选择。它们可能在大面积液晶平板显示器和高密度电视应用中应用于低成本光伏和热光伏发电选择。研究结果将在国际会议和科学期刊上传播。本研究由科学技术部（DST）在国家科学基金会/DST联合项目下支持。

0352805NaseemDescription: This award supports the US-India cooperative research entitled Investigating Metal Induced Crystallization on Thin Films of Amorphous Silicon. Professors Hameed Naseem, University of Arkansas and Ram Kishore, National Physical Laboratory (NPL), New Delhi will use characterization techniques including electron microscopy to investigate low temperature, aluminum induced solid phase crystallization of amorphous silicon. They expect to improve fundamental understanding of the basic science, including kinetics, of crystallization. Scope: The collaborators will employ complimentary strengths of the University of Arkansas in thin film processing and that of NPL in electron microscopy to study in real-time nucleation and growth mechanisms associated with crystallization behavior of amorphous silicon. They expect to develop new technologies that will reduce the amount of energy and material needed for a given end product and expand choices of low cost materials. They may be applications for lower cost photovoltaic and thermo-photovoltaic power generation options in large area liquid crystal flat panel displays and high-density TV application. Findings will be disseminated at international conferences and in scientific journals. This research is supported by the Department of Science & Technology (DST) under the NSF/DST joint program.