SBIR Phase I: Novel Hybrid Rapid Thermal Processing (HRTP) Systems for Annealing of Advanced Silicon on Insulator (SOI) Devices

该小型企业创新研究(SBIR)项目致力于开发用于先进绝缘体上硅(SOI)器件加工的新型高温退火系统。目前的快速热退火(RTA)系统，由于其大的时间常数，导致了大量的轮廓展宽。该公司提出开发一种新型的混合快速热处理(HRTP)系统，该系统结合了RTA和激光热处理的所有优点，同时消除了其缺点。使用SOI晶片可以显著减少流向基板的热流，从而进一步延长退火时间。在第一阶段，我们计划进行模拟和初步实验研究，以确定这一概念的可行性，并获得在该项目第二阶段构建原型系统所需的设计参数。快速热处理(RTP)系统是半导体制造操作的关键部分，用于形成栅氧化物、硅化物和退火离子注入的掺杂剂，以形成超浅结。在商业上，这些应用的市场规模超过5亿美元/年。随着器件的快速小型化，迫切需要开发更高的斜坡率和更高的温度退火系统来实现超浅结的形成。HRTP系统有望填补这一空白。HRTP系统还可用于GaN和碳化硅等宽带隙半导体的热退火，因为它们需要极高的温度，这是传统系统无法实现的。

This Small Business Innovation Research (SBIR) project focuses on development ofnovel high-temperature annealing system for processing for advanced silicon on insulator(SOI) devices. The present rapid thermal annealing (RTA) systems, lead to substantialprofile broadening because of their large time constants. The company proposes thedevelopment of a novel Hybrid Rapid Thermal Process (HRTP) system which combinesall the advantages of RTA and laser annealing while at the same time eliminating itsdisadvantages. The use of SOI wafers can further extend annealing times by significantlyreducing heat flow to the substrates. In the Phase I we plan to conduct simulation andpreliminary experimental studies to establish the viability of this concept and obtain thenecessary design parameters to construct a prototype system during Phase II of thisproject. Rapid Thermal Processing (RTP) systems are a critical part of semiconductormanufacturing operations and are used to form gate oxides, silicides and annealed ionimplanted dopants for formation of ultra-shallow junctions. Commercially, the market-size for these applications exceeds $500 M/year. With the rapid miniaturization of the devices, there is a strong need to develop higher ramp rate and higher temperature annealing systems to achieve the formation of ultra-shallow junctions. The proposed HRTP system is expected to fill this niche The HRTP system can also be used in thermal annealing of wide band gap semiconductors such as GaN and SiC as they require extremely high temperature, which cannot be achieved by traditional systems.