SBIR Phase I: Enhanced P-Type Doping of ZnO by Band Gap Engineering

这个小企业创新研究的第一阶段项目致力于使用ptype掺杂ZnO的新方法开发固态紫外/蓝色发光二极管（LED）。提出的概念提供了一种解决当前p型掺杂问题的方法，这是所有ZnO LED发展的主要障碍。ZnO具有明显的优势，其激子结合能是GaN的三倍，从而导致潜在的更高效的发光体。通过与其他元素合金化，zno基LED可以发出从紫外线到可见光的光。该项目将专注于p型掺杂和外延生长优化，从而实现全ZnO LED。从提出的工作中获得的理解将有利于和促进其他紫外器件的发展，如激光二极管、调制器和探测器。如果成功，该项目的成果将在民用和军事市场上得到广泛应用。应用包括一般室内照明、交通信号灯、户外显示、汽车应用和超高密度光存储系统。所提出的器件将实现独特的高功率和高温操作。这一发展将为实现基于pn结的发光体提供使能技术。具有改进性能的新型发射器将扩展SVTA的光学产品组合。

This Small Business Innovation Research Phase I project addresses the development of solid state ultraviolet/blue light emitting diode (LED) using novel approaches for ptype doping of ZnO. The proposed concepts offer a solution to current p-type doping problem, which is the main obstacle in the development of all ZnO LED. ZnO has the distinct advantage of having three times the exciton binding energy than that of GaN, leading to potentially much more efficient light emitters. By alloying with other elements, ZnO-based LED can emit light from ultraviolet to the visible. The proposed project will focus on p-type doping and epitaxy growth optimization leading to the realization of all ZnO LED. Understanding gained from the proposed work will benefit and spur the development of other UV devices such as laser diodes, modulators and detectors.If successful the outcome of this project will find widespread applications in civilian and military markets. The applications include general room lighting, traffic lights, outdoor displays, automotive application, and ultrahigh density optical storage systems. The proposed devices will enable unique high power and high temperature operation. This development would provide enabling technology for achieving light emitters based on p-n junctions. Novel emitters with improved performance will expand SVTA's optical product portfolio.