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Spintronic Devices Enabled by Semiconducting Boron Carbide

Spintronic Devices Enabled by Semiconducting Boron Carbide
由半导体碳化硼实现的自旋电子器件
批准号:
0725881
负责人:
Brian Robertson
金额:
$30.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-08-15 至 2011-07-31

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中文摘要
翻译
这项研究的目的是研究由高阻碳化硼(B-C)半导体实现的新的自旋隧道结和自旋晶体管器件。该方法是利用半导体B-C的独特性质(带隙可调谐、具有铁磁体的高界面自旋密度和小的自旋-轨道耦合)作为自旋器件的势垒材料),并进行自旋分辨光电子能谱、近原子尺度的表征、输运测量和器件建模。这项研究的目的是研究新型非氧化物阻挡层,使其能够在接近环境温度的情况下进行高效的自旋注入和检测,以及对自旋电子器件和超快器件的要求较低、高度坚固、可扩展的制造。智能优点:智能优点在于能够关联界面电子状态、结构和传输行为,从而了解和优化拟议的和未来的磁性隧道结器件的性能。这将通过清楚地描绘上述参数在促进自旋输运性质中所起的作用,为其他自旋电子学方法提供洞察。更广泛的影响:这项研究将推动对非氧化物势垒的研究,并为使用非磁性半导体的高效自旋注入设备开辟一条道路。研究小组将增加来自代表性不足群体(特别是女性)的研究生研究参与,培训研究生掌握复杂的实验和建模技术,并为他们提供区域内没有的全国联网机会。在外展方面,特别是在内布拉斯加州的农村,将开发基于半导体BC的实践科学和技术学习模块,作为教师的示范课堂资源,并将与NSF/UNL宇宙线观测站计划的增长相结合。
英文摘要
The objective of this research is to investigate new spin tunnel junction and spin transistor devices enabled by high-resistivity boron-carbide (B-C) semiconductors. The approach is to use the unique properties of semiconducting B-C (bandgap tunability, high interfacial spin density of states with ferromagnets, and small spin-orbit coupling) as a barrier material in spin devices) and to conduct spin-resolved photoemission, near-atomic-scale characterization, transport measurements, and device modeling. The research aims are to study novel non-oxide barrier layers which will enable efficient spin injection and detection even near ambient temperatures as well as less-demanding, highly-robust, scalable fabrication of spintronic and ultrafast devices. Intellectual Merit:The intellectual merit lies in the ability to correlate the interface electronic states, structure, and transport behavior and so to understand and optimize properties of the proposed, and future, magnetic tunnel junction devices. This will offer insight to other spintronics approaches by clearly delineating the role that the above parameters play in contributing to spin transport properties. Broader Impact:The research will spur investigation of non-oxide barriers and open a path to efficient spin-injection devices using non-magnetic semiconductors. The research team will increase graduate student research participation from under-represented groups (particularly women), train graduate students in sophisticated experimental and modeling techniques, and provide them with national networking opportunities not available regionally. For outreach, especially to rural Nebraska, hands-on science and technology learning modules based on semiconducting BC will be developed as model in-class resources for teachers and will be integrated with planned growth of the NSF/UNL Cosmic Ray Observatory Program.
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会议论文
Development of a Novel Inorganic Dielectric Barrier Layer for Magneto-Resistive Junctions
  • 批准号:
    0300018
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2003
  • 负责人:
    Brian Robertson
  • 依托单位:
Development of Spin Polarized Electron Scattering Facilities
  • 批准号:
    9977812
  • 项目类别:
    Standard Grant
  • 资助金额:
    $37.59万
  • 财政年份:
    1999
  • 负责人:
    Brian Robertson
  • 依托单位:
国内基金
海外基金
兼捕减少装置(Bycatch Reduction Devices, BRD)对拖网网囊系统水动力及渔获性能的调控机制
  • 批准号:
    32373187
  • 项目类别:
    面上项目
  • 资助金额:
    50万元
  • 批准年份:
    2023
  • 负责人:
    唐浩
  • 依托单位: