STTR Phase II: Germyl Silanes - Enabling Precursors for Chemical Vapor Deposition of Advanced CMOS Substrates, CMOS-Integrated MEMS, and Nano-Scale Quantum-Dot Silicon Phot

这个小企业技术转让第二阶段项目将展示锗基硅烷前体的中试规模制造及其在低温和选择性生长工艺条件下用于制造原型半导体器件和薄膜的用途。该项目解决了对前体和工艺的迫切需求，这些前体和工艺在低温条件下存款这种薄膜，其生产率大大高于现有工艺所提供的生产率。预计采用这些技术制造的设备的潜在市场每年将超过数十亿美元，并在未来五年内呈现两位数的增长率。富含锗的硅锗薄膜将使微处理器的时钟速度更快，手机、硅基光子学和更高效的太阳能电池的功耗更低。

This Small Business Technology Transfer Phase II project will demonstrate pilot scale manufacture of germyl silane precursors and their use to create prototype semiconductor devices and thin films under low temperature and selective growth processing conditions. The project addresses a critical need for precursors and processes that deposit such films under low temperature conditions with throughput rates that are significantly higher than those offered by existing processes. The potential market for devices made with these technologies is predicted to exceed several billion dollars per year and exhibit double-digit growth rates over the next five years. Ge-rich SiGe films will enable higher clock speeds in microprocessors, lower power consumption in cell phones, silicon-based photonics, and more efficient solar cells.