SBIR Phase I: Ion implantation-free SiC device fabrication technology based on low-temperature selective epitaxial growth

这个小企业创新研究第一阶段项目旨在为SiC电子产品开发新的半导体器件加工技术。新方法是基于SiC的低温选择性外延生长（LTSEG）。该技术具有很高的掺杂价值，特别是在SiC中存在的p型掺杂问题。另一个优势是为新兴市场的SiC功率集成电路开发了自对准制造技术。SiC自对准器件的制造尚处于萌芽阶段。日本和欧洲正在努力开发新的制造技术，这可能会使美国碳化硅行业在开发成本效益高的碳化硅电子产品方面明显落后。在这方面，新的器件制造方法提供了强大竞争优势的可能性。

This Small Business Innovative Research Phase I project aims at developing new semiconductor device processing technology for SiC electronics. The new method is based on low-temperature selective epitaxial growth of SiC (LTSEG) of SiC. The technology promises high values of doping, especially for p-type doping that is problematic in SiC. Another advantage is the development of a self-aligned fabrication technique for the emerging market of SiC power integrated circuits.Self-aligned device fabrication for SiC is in the embryonic stage. Efforts to develop new fabrication technologies in Japan and Europe are growing, which may put the U.S. SiC industry significantly behind in developing cost-efficient SiC electronics. In this respect, the novel device fabrication method offers a possibility of strong competitive advantage.