Nonlinear Vortex Dynamics in Superconductors with Anisotropic Pinning Nanostructures

在薄膜中制备单轴或双各向异性钉扎结构开辟了一条控制II型超导体混合态电阻响应的途径，并将其用于磁通电子学应用，即。e.操纵类似于纳米和微电子学中的电子的单个涡旋。此外，这样的膜提供了一个模型系统内的状态的最先进的理论方法描述的非线性涡旋动力学的各向异性钉扎的影响下，具有完全可预测的属性。从电阻率数据的各向异性钉扎电位参数的推导将允许第一次回答以下问题：在哪个频率范围是谐波产生最明显？如何优化特殊的（双各向异性和非对称棘轮）纳米结构，以提供最合适的钉扎电位特性的微波器件制造？霍尔效应和棘轮效应之间是否存在干涉效应？为了回答这些问题，将使用一个原始的双稳态电流方案，并应用特殊的非对称信号平均方法。预期的结果是感兴趣的不仅是薄膜超导体，但他们将是通用的所有类似的噪声介导的系统进行DC和AC电流驱动。

The fabrication of uniaxial or bianisotropic pinning structures in thin films opens up a controlled pathway to govern the mixed-state resistive response of type-II superconductors with a perspective of using it for fluxonics applications, i. e. manipulating single vortices similar to electrons in nano- and microelectronics. Moreover, such films provide a model system with fully predictable properties within a state-of-the-art theoretical approach of describing the nonlinear vortex dynamics under the influence of anisotropic pinning. The deduction of anisotropic pinning potential parameters from resistivity data will allow for the first time to answer the following questions: In which frequency range is a harmonic generation most pronounced? How can one optimize special (bianisotropic and asymmetric-ratchet) nanostructures to provide the most suitable pinning potential characteristics for microwave device fabrication? Is there an interference effect between the Hall- and the ratchet-effect? In order to answer these questions an original rotating-current scheme will be used and special methods for asymmetric signal averaging be applied. The expected results are of interest not only for thin-film superconductors but they will be generic to all similar noise-mediated systems subjected to DC and AC current driving.