EPAS: Hierarchical Characterization of Optoelectronic Hyperdoped Silicon Devices for Terawatt-Scale Photovoltaics
EPAS: Hierarchical Characterization of Optoelectronic Hyperdoped Silicon Devices for Terawatt-Scale Photovoltaics
批准号:
1102050
负责人:
Tonio Buonassisi
金额:
$37.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-09-01 至 2015-08-31
中文摘要
EPAS:太瓦级光电超掺杂硅器件的分级表征研究目标和方法:本研究的目的是展示一种生产高性能超掺杂硅光电器件(PV)的可行途径。该方法是确定的性能限制缺陷的PV器件含有超掺杂硅的基本属性,从而导致下一代设备的制造。具体来说,我们将诊断当前最先进的设备(显示效率约为1%),同时创造出性能大幅提升的高性价比器件。知识产权:10年前发现了高掺杂材料,并因其潜在的光伏应用而引起了人们的兴趣;然而,由于缺乏对限制缺陷的理解,还没有出现重要的光伏技术。首先,我们将仔细描述和建模使用当前超掺杂方法制造的太阳能电池。其次,我们将分析性能限制缺陷的基本属性,同时制定一项策略,以减少或消除其影响。最后,我们将制造避免这些缺陷的新型原型电池。更广泛的影响:由于硅基光伏发电的储量丰富,足以在太瓦级做出贡献,因此它非常适合实现降低经济碳强度和改善能源安全的双重目标。拟议的工作还将解决NSF?的使命,推进发现,同时促进教学,培训,学习和多样性。利用YouTube和维基百科等新媒体,该小组将成功地向公众传播这项工作的影响。
英文摘要
EPAS: Hierarchical Characterization of Optoelectronic Hyperdoped Silicon Devices for Terawatt-Scale PhotovoltaicsResearch Objectives and Approaches: The objective of this research is to demonstrate a viable route to production of high-performance hyperdoped silicon photovoltaics (PV). The approach is to determine the fundamental properties of performance-limiting defects in PV devices containing hyperdoped silicon, thus leading to fabrication of next-generation devices. Specifically, we will diagnose the current state-of-the-art devices (demonstrate efficiencies of ~1%) using a hierarchical characterization approach, while creating cost-effective devices with drastically improved performance.Intellectual Merit: Hyperdoped materials were discovered 10 years ago and have since drawn interest for their potential photovoltaic applications; yet no significant photovoltaic technology has yet emerged due to a lack of understanding of limiting defects. First, we will carefully characterize and model solar cells fabricated using current hyperdoping methods. Second, we will analyze the fundamental properties of performance-limiting defects, while developing a strategy for how to reduce or eliminate their impact. Lastly, we will fabricate new prototype cells that avoid these pitfalls.Broader Impact: Because it is abundant enough to contribute at the terawatt scale, silicon-based PV is excellently positioned to contribute to the dual goals of decreasing our economy's carbon-intensity while improving energy security. The proposed work will also address the NSF?s mission of advancing discovery while promoting teaching, training, learning, and diversity. Using new media including YouTube and Wikipedia, the group will successfully disseminate the impact of the work to the general public.
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Collaborative Research: SusChEM: Air-stable, high-lifetime bismuth compounds as solar absorbers with perovskite-like band structures
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批准号:1605547
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2016
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负责人:Tonio Buonassisi
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依托单位:
CAREER:Toward robust, scalable, and non-intermittent solar power: Silicon-based multijunction devices with integrated photocatalysis
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批准号:1150878
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项目类别:Standard Grant
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资助金额:$40.0万
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财政年份:2012
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负责人:Tonio Buonassisi
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依托单位:
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批准号:22178062
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项目类别:面上项目
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资助金额:60万元
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批准年份:2021
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负责人:朱海波
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依托单位: