High-Pressure Synthesis of Gallium Oxonitrides and Indium Oxonitrides and their solid solutions

本项目的目的是在MN-M2O3 （M = Ga, in）体系中高压/高温合成新的氮氧化合物相。新材料将通过特殊化合物和起始材料的转化，在高温高压条件下使用激光加热的金刚石砧细胞、原位x射线多砧装置和沃克型多砧压力机来合成。在第一步中，将合成具有不同摩尔组成的新型氧化氮化镓，并密切关注其结构和物理性质，这取决于N/ o比。这些研究将伴随着广泛的量子力学计算，从而产生面向目标的合成策略，这将导致GaN-Ga2O3系统的精确相图。在第二步，这些系统的研究将扩展到系统InN / In2O3上，进入一个新的高密度氧氮化体系，到目前为止没有化合物存在。此外，研究将扩展到固溶体，例如（Al, Ga, In）氧氮化物。计划中的高温高压实验开辟了一类新的材料，这是在环境压力条件下使用传统合成策略无法获得的。通过这种方式，将研究具有新晶体结构和材料特性的未知稳定区域。

The aim of this project is the high-pressure / high-temperature synthesis of new oxonitride phases in the system MN-M2O3 (M = Ga, In). The new materials will be synthesized via the transformation of special compounds and starting materials by applying HP/HT conditions using laser-heated diamond anvil cells, an in-situ X-ray multianvil device, and a Walker-type multianvil press. In a first step, new gallium oxonitrides with a varying molar composition will be synthesized with a close view to their structural and physical properties depending on the N/O-ratio. These investigations will be accompanied by extensive quantum mechanical calculations resulting in a target-oriented synthetic strategy, which will lead to a precise phase diagram of the system GaN-Ga2O3. In a second step, these systematic investigations will be extended on the system InN / In2O3, entering a new high-density oxonitride system, in which no compounds exist until now. Furthermore, the investigations will be expanded to solid solutions, e.g. (Al, Ga, In) oxonitrides. The planned HP/HT experiments open up a new class of materials, which is not accessible using a conventional synthetic strategy under ambient pressure conditions. Following this way, unknown areas of stability with new crystal structures and material properties will be investigated.