SBIR Phase I: Novel Structure for Efficient and Reliable Medium Voltage Silicon Carbide (SiC) Power Devices

这个小型创新研究(SBIR)第一阶段项目的更广泛的影响/商业潜力是提高电源转换系统(PCS)的效率和可靠性，同时还降低复杂性和成本。PCS电力电子的系统建造商和最终用户可能受益于电力半导体技术的拟议进步，这些进步转化为更便宜、更具弹性和可持续的电力生产、分配和消费。当所提出的电力半导体器件在未来的PC中变得无处不在时，DC(直流)微电网内的分布式能源和储能系统的互联以及DC微电网和传统AC(交流)配电网之间的接口将变得更简单、更高效和更可靠。这个小型企业创新研究(SBIR)第一阶段项目将改进先进的电力半导体加工技术。具体地说，该项目的重点是：1)开发以碳化硅MOSFET(碳化硅金属氧化物半导体场效应晶体管)为形式的可靠的基于半导体的大功率电子开关，2)优化电子开关参数，以实现效率和可靠性之间的最佳折衷，以及3)充分表征电子开关的电气性能。这项研究将包括设计实验，以确定考虑到半导体加工设备的制造限制的最佳电子开关参数集。这两个团队寻求生产一种基于半导体的功能强大的电子开关，它能够比目前市场上提供的更可靠、更高效地运行。该团队还寻求通过扩展最终的SIC MOSFET技术来制造更高的功率电子开关。这一奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

The broader impact/commercial potential of this Small Innovation Research (SBIR) Phase I project is to improve the efficiency and reliability power conversion systems (PCSs) while also reducing the complexity and cost. System builders and end-users of power electronics for PCS may benefit from proposed advancements in power semiconductor technology that are translated to cheaper and more resilient and sustainable electricity generation, distribution, and consumption. The interconnections of distributed energy resources and energy storage systems within DC (direct current) micro-grids and interfaces between DC micro-grids and legacy AC (alternating current) distribution grid networks will be made simpler, more efficient, and more reliable when the proposed power semiconductor devices become ubiquitous within future PCS.This Small Business Innovation Research (SBIR) Phase I project will improve advanced power semiconductor processing techniques. Specifically, the project focuses on: 1) developing a reliable semiconductor-based, high power electronic switch in the form of a SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor), 2) optimizing the electronic switch parameters to achieve the best trade-off between efficiency and reliability, and 3) fully characterizing the electrical performance of the electronic switch. The research will involve the design of experiments to determine the optimal set of electronic switch parameters that take into account manufacturing limitations of the semiconductor processing equipment. The teams seeks to produce a functioning semiconductor-based, high power electronic switch that is capable of operating more reliably and more efficiently than what is presently available in the market. The team also seeks to enable even higher power electronic switches to be made by means of scaling the resultant SiC MOSFET technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.