In situ transmission electron microscopy of resistive switching devices (B09)

在项目B9中，重点将放在开关过程中新型相变材料和VCM材料的原位透射电子显微镜表征上。使用像素化STEM技术和离轴电子全息技术，将以亚纳米的空间分辨率跟踪原子结构和局部电场分布的变化。对于PCM，主要的重点将是空间受限设备的研究，对于这些设备，小的设备尺寸和短的保留时间会使成像变得复杂。对于VCM，主要的重点将是研究缺陷，这需要亚原子分辨率的结构和化学分析。

In Project B9, the focus will be on in situ TEM characterization of novel PCM and VCM materials during switching processes. Changes in atomic structure and local electric field distributions will be tracked with sub-nm spatial resolution using both pixelated STEM techniques and off-axis electron holography. For PCMs, the primary focus will be on studies of spatially confined devices, for which the small device sizes and short retention times complicate imaging. For VCMs, the primary focus will be on studies of defects, which require sub-atomic-resolution structural and chemical analysis.