Adapted converter topologies for GaN power electronics

电力电子的高效能量转换在工业自动化、消费电子、交通运输和电网等领域具有越来越重要的作用，尤其是在可再生能源的集成方面。基于氮化镓(GaN)的功率半导体由于其良好的导电和开关性能，为实现高紧凑性和高效率的功率转换器提供了可能。为了简化现有的和开发新的转换器拓扑，制造双向导通和阻断晶体管的技术选择是很有前途的。在这个研究项目中，利用GaN常断晶体管(HFET)的双向导通特性，并应用优化的驱动器概念和电路，评估了硬开关GaN转换器在kW功率范围内的极限。双向阻挡GaN HFET将根据驱动器的概念进行开发、制造和测试。最后，将对这些设备进行建模。利用这些模型，将对各种变流器拓扑进行模拟、评估，并将实现一个演示器，以展示这一新技术的潜力。

Efficient energy conversion with power electronics is of continuously increasing importance in different areas as industry and automation, consumer electronics, transportation and electric grids, here especially concerning the integration of regenerative energy sources. Due to their excellent conducting and switching properties, power semiconductors based on Galliumnitride (GaN) offer the possibility to realize highly compact and at the same time highly efficient power converters. The technological option to manufacture bidirectional conducting and blocking transistors is promising in order to simplify existing and develop new converter topologies. In this research project, the limits of hard-switching GaN-converters in the kW power range is evaluated, making use of the bidirectional conduction behaviour of GaN normally-off transistors (HFETs) and applying optimized driver concepts and circuits. Bidirectional blocking GaN HFETs will be developed, manufactured and tested adapting the driver concept. Finally, the devices will be modelled. Using these models, alternative converter topologies will be simulated, evaluated and a demonstrator will be realized to show the potential of this new technology.