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Hot-Wire Chemical Vapor Deposition System

Hot-Wire Chemical Vapor Deposition System
热丝化学气相沉积系统
批准号:
282211330
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
德国
项目类别:
Major Research Instrumentation
财政年份:
2015
资助国家:
德国
项目状态:
未结题
起止时间:
2014-12-31 至 --

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中文摘要
翻译
该小组的负责人是拓扑绝缘体(TIs)和拓扑超导体(tsc)的研究人员。我们的团队一直在大阪大学做研究,但正在转移到科隆大学,更多地关注ti和tsc的基础物理学。我们研究的目标之一是在ti和tsc中发现新的量子现象,这需要基于这些材料制造最先进的设备。热线化学气相沉积(HWCVD)系统是一种非常有用的工具,可以在低温下沉积高质量的SiNx介电层,用于ti的顶栅制造,而不会降低表面质量,我们的团队已经在大阪使用该工具制造各种器件。然而,不幸的是,科隆大学没有HWCVD系统,因此我们不可能在不购买新的HWCVD系统的情况下继续在这个核心领域进行研究。
英文摘要
The head of the group is a researcher of topological insulators (TIs) and topological superconductors (TSCs). Our group has been doing research at Osaka University, but is moving to the University of Cologne to focus more on the fundamental physics of TIs and TSCs. One of the objectives of our research is to discover novel quantum phenomena in TIs and TSCs, which requires fabrications of state-of-the-art devices based on these materials. The hot-wire chemical vapor deposition (HWCVD) system is a very useful tool for depositing high-quality SiNx dielectric layer at low temperature for top-gate fabrications on TIs without degrading the surface quality, and our group is already using this tool to fabricate various devices at Osaka. However, there is unfortunately no HWCVD system at the University of Cologne, and hence it is impossible for us to continue doing the research in this core area without buying a new HWCVD system.
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基于Arcing wire PAW的铝锂合金异质三丝合金化增材制造机理与控制