Development of the novel next generation III-Nitride semiconductor wurtzite AlPN

关于改善AlPN层的生长条件的工作仍在继续。研究发现，生长过程中过多的NH3也将P推到了不想要的Al晶格上。利用最近推出的用于P和NH3的小尺寸质量流量控制器，在2023年1月实现了纯AlPN层的可控生长，高达6%。制作了变压器结构，并用变温霍尔测量证实了二维电子气的存在。到目前为止，研究结果已经在两个国际会议上公布，2022年6月在德国斯图加特举行的IC-MOVPE和10月份在德国柏林举行的IWN-2022年会议，并发表在同行评议的《晶体生长杂志》(M.Pristovsek J，Crystal Growth 600(2022)126908 http./doi，从12月1日开始，一个关于高电子迁移率晶体管(HEMT)的AlPN势垒生长的国际联合研究项目与德国柏林的Ferdinand-Braun-Institute一起启动。作为一部分，聘请了一名新的博士后，因此2023年的进展预计将增加。此外，该项目还包括与一名年轻的研究人员合作，专注于传输电子显微镜(TEM)，这对进一步优化界面至关重要。

The work continued on improved growth conditions for AlPN layers. It was found out that too much NH3 during growth was also pushing the P on an unwanted Al-lattice place. Using the recently delivered small size Mass flow Controller for P and NH3, controlled growth of pure AlPN layer have been achieved up to 6% in January 2023.Transitor structure have been made and the exisitence of a two/dimensional electron gase was confirmed using variable temperature Hall measurements. The mobilities were still lower than expected which is due to the reletivelz rough interfaces that are currentlz in the focus of research.The results so far have been presented at two international conferences, IC-MOVPE in June 2022 in Stuttgart, Germany and the IWN-2022 in October in Berlin, Germany and published in the peer-reviewed Journal of Crystal Growth (M. Pristovsek J, Crystal Growth 600 (2022) 126908 http.//doi,orf/10.1016/j.jcrysgro.2022.126908 ).From Dec. 1st an international joint research project on AlPN barrier growth for high-electron mobitlity transistors (HEMTs) started together with Ferdinand-Braun-Institute in Berlin, Germany. As part a new Postdoc was hired, so progress in 2023 is expected to increase. Also the project included a cooperature with a young research focussing on Transmission electron microcopy (TEM), which is essential for the further optimisation of interfaces.