Quantumferroelectric thermosensor for application of microcalorimeter

量子顺电材料在低于几K的低温下具有大的电容恒定值。通过掺杂适量的杂质，量子顺电材料经历了向量子铁电材料的相变。量子铁电材料的电容在100 mK的温度范围内具有很大的温度依赖性。在本工作中，发现掺杂KTN样品经历了从量子顺电态到量子铁电态的相变。由于掺杂KTN的电容在100 mK温度范围内具有温度依赖性，因此有望用作微量热计的热敏元件。

A quantumparaelectric material has a large constant value of the electric capacitance in low temperatures below several K. By doping adequate impurities, the quantumparaelectric material expeiences the phase transition to the quantumferroelectric material. The electric capacitance of the quantumferroelectric material has large temperature dependence in the temperature region of 100 mK. In this work, an impurity doped KTN sample was found to experience the phase transition from the quantumparaelectric state to the the quantumferroelectric state. The impurity doped KTN is expected to be used for the thermosensor of the microcalorimeter because of the temperature dependence of the electric capacitance in the temperature region of 100 mK.