Developemental Search on the Crystal Growth Tequnique of the qualified single Crystal of Cerium Compounds by a newly Constructed Arc-Furnace.

由于缺乏高效的多用炉，导致我国对固体物理，特别是稀土和铀化合物的基本物理性质的研究十分滞后。在本研究项目中，我们对一种新型的原装三弧加热炉进行了开发研究，该加热炉将旋转水冷炉上的原料通过三个火炬均匀加热并熔化成带弧形的化合物，由独立控制的电源在常压氩气中进行控制。在材料合成的过程中，将另一台水冷炉膛上的金属钛或锆预加热，用第四个电弧炉预热，以去除大气压气体、水冷金属炉罐内壁和炉膛周围表面中的杂质氧气体。我们试图使新的水冷炉子具有生产成本低的特点，并可用于三弧和射频加热下的提拉法等多种用途的晶体生长。新加热炉建成后，我们从1988年开始继续进行高性能炉型的工作。我们还研究了如何在重费米子态下生长具有高保密性的Ce化合物单晶。在很低的温度下，重费米子态的物理性质对杂质非常敏感。对于单晶生长质量最好的单晶，我们可以得出如下结论：使用最高纯度的起始元素以及合成后在超高真空中重熔或热处理是获得良好单晶的关键。

The lack of the highly efficient multi-purpose furnace causes great deley in exellent research about the basic physical properties on the solid state physics, especially in rare earth and uranium cpompounds in our country. In this research projict, we have investigated developementally for a new original tri-arc heating furnace, where the starting materials on the rotating water-cooled hearth are heated and melted homogeniously into a compound with arcs through three torches by the power suppliers controlled independently in the atmospheric argon gas. On the way to the material synthesis, titanim or zirconium metal on the another water-cooled hearth is beforehand heated by the 4th arc torch for removal of the impurity oxgen gas from the atmosheric argon gas, the inside wall of water-cooled metallic furnace can and the surface around the hearth.We have Tried to make the new chracteristic furnace in low production cost and to be usefull for crystal growth in a multi-purpose such as the pullinf-up method under the tri-arc and rf heatings. After the construction of the new furnace, we have proceeded further with the work as a higher performance furnace properties of actinide compounds started from 1988.We have also studied how to grow the single crystal with high guarity cerium compounds in the heavy fermion state. The physical properties of the heavy fermion state is very sensitive to the impurity at very low temperatures. We can reach a final conclusion for single for single crystal growth with the best quality as follows; the use of the starting elements in the highest purity and the remelting or annealing in an ultra high vacuum after systhesis are most essential to get a good single crystal.