Efficient Subharmonically Locked THz Indium Phosphide Heterojunction Bipolar Transistor Circuits for Mobile Applications ((2)-C11)

在移动太赫兹传感和定位应用中需要高效、紧凑、波束导向的电子源。研究了推-推式磷化铟(InP)异质结双极晶体管(HBT)振荡器磁芯的亚谐注入锁定。以500 GHz信号产生为目标，设计了具有锁定输入的InP HBT电路，并在UDE上进行了测试和分析，并在现有的铸造工艺中完成了制作。建立了次谐波注入锁定过程的详细模型，研究了从输出功率、功率效率和锁定范围等方面测量的性能。

Efficient, compact, beam-steered electronic sources are needed in mobile THz sensing and localization applications. The subharmonic injection locking of push-push induim phosphide (InP) heterojunction bipolar transistor (HBT) oscillator cores is investigated. InP HBT circuits with locking input targeting 500 GHz signal generation are designed, measured and analyzed at UDE, the fabrication is done in an available foundry service. A detailed model of the subharmonic injection locking process is developed, and measured performance in terms of output power, power efficiency, and locking range are investigated.