Development of Technology for Control of Thin Film Formation, Crystallinity and Interface by Intense Liquid Metal Ion Beams

科研资助项目(B)：强化浸渍电极型液态金属离子源，利用浸渍电极型液态金属离子源开发金属薄膜形成装置，并对该装置沉积的薄膜进行评价。研究结果简述如下。1)浸渍电极型液态金属离子源的强化：在本项目之前，利用具有三个离子发射点的烧结多孔尖端获得了1.3 mA的金属离子电流。1989年，新开发了具有8个离子发射点的烧结多孔尖端；1990年，对离子源的结构进行了改进，使离子源具有2 ~ 4个尖端和贮槽。通过计算机模拟和实验对离子提取电极的结构进行了优化。结果，获得了4.6 mA以上的高锗离子电流。成功地从浸渍电极型液态金属离子源中提取了镍和钇离子。实验结果表明，浸渍电极型液态金属离子源可以使用10种不同的金属材料作为源材料。2)金属薄膜形成装置的发展，金属薄膜的形成和评价：1989年，借助计算机模拟，研制了配备浸渍电极型液态金属离子源的成膜装置。1990年，对沉积装置的基本特性进行了研究。制备了金薄膜，并用x射线衍射分析评价了薄膜的结晶度。结果表明，制备的金膜具有（111）择优取向。(3)界面扩散评价技术的发展：为了定量评价金属原子对基体的相互扩散，开发了生成卢瑟福后向散射谱的模拟代码。通过在硅衬底上沉积铜膜，验证了所开发的代码对实际后向散射光谱的适用性。目前的结果表明，通过对本课题的进一步研究，可以实现对金属薄膜结晶度的控制。少

Research on the following subjects was performed with the Grant-in-Aid for Scientific Research (B) : Intensification of the impregnated-electrode-type liquid-metal ion source, development of thin-metal film formation apparatus with the impregnated-electrode-type liquid metal ion source and evaluation of the films deposited by the above apparatus. Results of the research are described below briefly.1) Intensification of the impregnated-electrode- type liquid-metal ion source : before this project, metal ion current of 1.3 mA had been obtained by using the sintered porous tip with three ion-emission points. In 1989, sintered porous tip with eight ion-emission points was newly developed, and in 1990, structure of the ion source was modified so that the ion source was equipped with two to four tip-and-reservoirs. Optimization of the configuration of the ion extraction electordes was also performed by both computer simulation and experiments. As a result, a high germanium ion current of 4.6 … More mA was obtained. Ions of nickel and yttrium were successfully extracted from the impregnated-electrode-type liquid metal ion source. It was found out that ten different Kinds of metal materials can be used as source materials by the imprengnated-electrode-type liquid-metal ion source.2) Development of metal-thin film formation apparatus, formation and evaluation of metal-thin films : in 1989, the film formation apparatus equipped with an impregnated-electrode-type liquid-metal ion source was developed with an aid of computer simulation. In 1990, fundamental characteristics of the deposition apparatus was investigated. Deposition of gold thin films was performed and crystal-linities of the films were evaluated by x-ray diffraction analysis. As a result, it was found that the obtained gold films showed (111) -preferred orientation.(3) Development of evaluation technique of interface diffusion : In order to evaluate the interdiffusion of metal atoms to substrate quantitatively, a simulation code to generate Rutherford backscattering spectra was developed. Applicability of the developed code to the practical backscattering spectra was confirmed with copper films deposited on silicon substrate. The present results indicated that control of the crystallinity of metal thin films will be achieved through further investigation upon the present subject. Less