Photoinduced Displacement current across organic-monolayrs and the development of monolayr-memory devices

本计画的目的是在光致位移物理的基础上，探讨有机单分子层的电性与光学性质，进而利用光致位移电流来开发有机单分子层记忆元件。本文用Maxwell位移电流测量技术检测了偶氮染料在水表面形成的单层膜的光致异构化。在可见光和紫外光交替照射下，在单分子层上沿相反方向产生了反向电流。这种现象被应用到有机单层存储器件的发展，使用固体基板上制备的单层。然后，我们用聚酰亚胺LB膜制作了隧道结。通过I-V和d^2V/dI^2-V测量研究了薄膜中的电子输运机制。结果表明，电子在薄膜中穿隧而过，而不损失其自身的能量。基于这些信息，我们制作了单层器件使用聚酰亚胺作为隧道势垒，我们也制作了单层器件使用聚酰亚胺功能实体。

The purpose of this project was to examine the electrical and optical properties of organic single monolayrs on the basis of physics of dielectrics, and then to develop organic-monolayr memory devices using photoinduced displacement current across the monolayr. Photoisomerization of monolayr films containing Azo-dye prepared on a water surface was found to be detected by means of Maxwell-displacement-currentmeasuring-technique developed by the present investigators. The desplacement current was reversely generated across single monolayrs in opposite directions by alternately irradiation of visible and ultra-violet lights. This phenomenon was applied to the development of organic-monolayr memory devices using single monolayrs prepared on solid substrates. We then fabricated tunnel junction with polyimide Langmuir-Blodgett films. The electron transport mechanism through the films was examined by means of I-V and d^2V/dI^2-V measurements. It was found that electrons tunnel scross across the films without loss of their own energy. Based on this information, we fabricated monolayr devices using polymide as a tunneling barrier, and we also fabricated monolayr devices using polyimide with functional entities.