Study on electron and energy transfer in highly organezed aggregates by quantum beams

花青染料和花生酸在衬底或石英上的LB膜在紫外光和可见光照射下几乎不分解，但在Ar气氛中用γ辐射和电子束能明显分解，产生很大的G值。这种大的G值被认为是由于从衬底到LB层的能量转移，但最终归因于气相中Ar的辐解物种的攻击。染料溶液的γ辐解和脉冲辐解实验表明，染料溶液的辐解主要来自Ar^+离子; LB膜的荧光显微镜观察表明，染料膜中J聚集体的畴结构对染料J聚集体的辐解有很大影响，从LB膜的观察中发现J聚集体的高度发展的畴具有高度的 ...更多信息 染料分子的有序结构，并推断染料的高度有序和较低有序的分子或单体之间的电子和能量转移与染料的分解反应密切相关。另一方面，制备了花生酸在硅衬底上的LB膜，XPS谱表明花生酸分子间存在较强的化学相互作用以及衬底表面上的硅原子。在此基础上，采用电化学沉积法在GaAs衬底上制备了双十八烷基二硫代氨基甲酸酯（DOTC）薄膜，探讨了DOTC层中的硫原子稳定GaAs表面悬挂键的可能性，使DOTC层成为稳定的薄绝缘体。膜的XPS谱表明DOTC中的硫原子与GaAs表面的As原子之间形成了化学键，光致发光谱表明样品的表面态密度明显降低。少

Langmuir Blodgett films of cyanin dye and arachiadic acid on the substrates or quarts were found to decompose very little by irradiation of UV and visible light, but to decompose markedly with gama radiation and electron beams in the atmosphere of Ar to yield very large G values. This large G value was considered to arize from the energy transfer from the substrate to the LB layrs, but was finally attributed to the attack of the radiolysis species of Ar in the gas phase. Gamma radiolysis and pulse radiolysis experiments of the cyanin dye solutions revealed that the major contribution to the decomposition of the dye comes from the Ar^+ ion species.Observation of the LB membranes with fluorescence microscope showed that the decomposition of the J aggregates of the dyes induced by radiation is largely affected by the domain structures of the J aggregates in the dye membranes, and the highly developped domains of the J agregates was found from the observation of the LB films to have highly … More ordered structure of the dye molecules and it was inferred that electron and energy transfers between the highly ordered and the less ordered molecules or the monomers of the dyes are deeply related to the decomposition reactions of the dyes.On the other hand, the LB membranes of the arachiadic acid on the substrates of silicon were prepared and their XPS spectra showed that the strong chemical interactions exist between the arachiadic acid molecules and the silicon atoms on the surface of the substrates. Based on this experimental results, the thin membranes of dioctadecyl-dithiocarbamate (DOTC) on the substrate of GaAs were prepared using electrochemical deposition method to cheek the possibility of stabilizing the dangling bonds of the GaAs surfaces with the sulfur atoms in the DOTC layrs that become stable and thin isulator. The XPS spectra of the membranes showed that chemical bonds are formed between the sufur atoms in DOTC and the As atoms in the surface of GaAs, and the density of the surface states of the samples was found from their photoluminescence spectra to be reduced markedly with this treatment. Less