Fundamental Research on Functional Realization of Semiconductive Ceramics

1.陶瓷多层膜的模型界面半导体陶瓷的非线性V-1特性起源于晶界或界面。利用溅射方法制备的Ni/ZnO(CoO)/Pr_6O_(11)/Au等多层膜的模型界面来研究其非线性导电机制。这种模型界面的研究有助于寻找新的人工材料。陶瓷界面的介电异常Nb(Fe_1/2&Gt；Nb_&lt；1/2&gt；)O_3居里温度以上的宽峰可能与晶界界面有关。这种介电异常和热释电电流可以用钙钛矿结构B位离子价态从Fe^&lt；3+&gt；到Fe^&lt；2+&gt；在晶界界面上的空间电荷极化来解释。

1.Model Interface in Ceramic Multilayred FilmsThe nonlinear V-1 characteristics of semiconductive ceramics originate in a grain boundary or interface. The model interface in multilayred films such as Ni/ZnO (CoO)/Pr_6O_<11>/Au fabricated by the sputtering technique is used for understanding the nonlinear conduction mechanism. The study of such a model interface is useful for searching new artificial materials.Dielectric Anomaly in the Interface of CeramicsA broad peak above the Curie temperature of lead iron niobate pb (Fe_<1/2>Nb_<1/2>) O_3 may be related to interfaces at the grain boundary. Such dielectric anomaly and pyroelectric current of this compound may be explained by the space-charge polarization in the interfaces of the grain bounday due to ionic valence changes from Fe^<3+> to Fe^<2+> in B-site of the perovskite structure.