Studies of miky transparent conducting ZnO : Al films with textured surface

本项目的目的和结果如下：本文报道了用CVD和直流磁控溅射法制备透明导电氧化锌薄膜。在化学气相沉积（CVD）薄膜方面：以乙酰丙酮锌（Zn(C_5H_7O_2)_2）和水（H_2O）和过氧化氢（H_2O_2）为氧源，采用大气和低压化学气相沉积（CVD）技术在玻璃衬底上制备了透明导电的氧化锌（ZnO）薄膜。结果表明，含氢的H_2O和H_2O_2是比含氧气体（如空气）更好的氧源。以乙酰丙酮铝（Al(C_5H_7O_2)_3）为掺杂源，在350℃的衬底温度和60 Torr的低压下，在波长550 nm处制备了电阻率低至7 × 10^<-3> OMEGAcm，雾度比高达62%的铝掺杂ZnO薄膜。在溅射薄膜的情况下：使用Al2O3含量在0-2.0 wt%范围内的ZnO靶材，通过直流磁控溅射制备了具有纹理表面的透明导电乳状ZnO薄膜。晶粒生长和表面形貌在很大程度上取决于Al2O3的含量，从未掺杂ZnO薄膜的圆盘状织构表面到制备的ZnO: Al薄膜的楔形织构表面，其含量大于0.5 wt%。Al2O3含量为0.75 wt%时制备的乳白色ZnO: Al薄膜的近红外透光率明显优于2.0 wt%制备的薄膜。当Al2O3含量为0.75 wt%时，制备的3 mum厚的乳白色ZnO: Al薄膜在波长为550 nm时，薄膜电阻低至3.2 OMEGA/*，透射率为78%，雾度率为65%。

Purpose and results of this project are shown as follows. We report transparent and conductive zinc oxide thin films prepared by CVD and dc magnetron sputtering.In the case of CVD films : Transparent and conducting zinc oxide (ZnO) films have been prepared on glass substrate by atomospheric and low pressure chemical vapor deposition (CVD) using zinc acetylacetonate (Zn(C_5H_7O_2)_2) and oxygen sources of water (H_2O) and hydrogen peroxide (H_2O_2). It was found that H_2O and H_2O_2, which incliude hydrogen, were better oxygen sources than an oxygen-containing gas such as air. Al-doped ZnO films with a resistivity as low as 7 X 10^<-3> OMEGAcm and haze ratio up to 62% at wave length of 550 nm were prepared at a substrate temperature of 350 ﾟC and a low pressure of 60 Torr using aluminium acetylacetonate (Al(C_5H_7O_2)_3) as the dopant source.In the case of sputtered films : Transparent and conductive milky ZnO films with a textured surface were prepared by dc magnetron sputtering using ZnO targets with an Al2O3 content in the range 0-2.0 wt%. The grain growth and surface morphology were considerably dependent on the Al2O3 content, ranging from a disk-like textured surface for undoped ZnO films to a wedge-like textured surface for ZnO : Al films prepared with a content above 0.5 wt%. The transmittance in the near-infrared range of milky ZnO : Al films prepared with an Al2O3 content of 0.75 wt% was considerably better than that of films prepared with a content of 2.0 wt%. A sheet resistance as low as 3.2 OMEGA/*, a transmittance of 78 % and a haze ratio of 65 % at a wave length of 550 nm were obtained for milky ZnO : Al films 3 mum thick prepared with an Al2O3 content of 0.75 wt%.