Research and Development of silicon semiconductor detector technologies for measuring momentum in very high radiation environments

建立了高耐辐射p型硅半导体位置测量探测器的工艺。硅微带传感器的评价范围为10~(**)15 1 MeV中子当量(NEQ)/cm~2，像素传感器为10~(**)16。用热电子分析和TCAD模拟对结构进行了详细的优化，实现了辐照前保持1KV的偏压。研制了高密度、高导热、轻质的新型杂化材料，构建了双面组件，并对其热电性能进行了评价。

Technologies for highly radiation tolerant p-type silicon semiconductor position measuring detectors are established. Silicon microstrip sensors were evaluated up to a flunece of 10**15 1-MeV neutrons-equivalent (neq)/cm**2 and pixel sensors to 10**16. Irradiation dependence of various structures and charge collection were demonstrated. Optimization of structures in detail with hot electron analyses and TCAD simulation achieved holding 1 kV bias voltage before irradiation. New, high-density, high-thermal conductivity and light-weight hybrids were fabricated and double-side modules were constructed and thermal and electrical performance was evaluated.