Bipolar Materials Based on N-heterocycles for Novel Memory Applications (C07*)

本计画的目标是探讨以N-杂环化合物为活性材料的铁电体在非挥发性磁阻记忆体中的应用。我们将探索平面和近平面的N-杂环与偶极侧基，如（硫代）酰胺，以获得有序无序铁电体与前所未有的功能，包括铁电开关，整流体电导率。此外，我们的目标1，2和3D位移铁电材料的基础上堆叠的交替施主和受主分子。在这里，N-杂环将充当供电子部分，Fx-TCNQ（x = 0，2，4，6）充当受电子部分。

The goal of this project is to explore ferroelectrics based on N-heterocycles as active material in nonvolatile rewritable resistive memories. We will explore planar and near-planar N-heterocycles dressed with dipolar side groups like (thio)amides to obtain order-disorder ferroelectrics with unprecedented functionality, including a ferroelectrically-switchable, rectifying bulk conductivity. In addition, we target 1, 2 and 3D displacive ferroelectric materials based on stacks of alternating donor and acceptor molecules. Here, the N-heterocycles will act as electron donating moiety and Fx-TCNQ (x = 0,2,4,6) as electron accepting moiety.