Organic integrated circuits using pseudo-CMOS circuit configurations

我们制作了全溶液处理的有机薄膜晶体管（TFTs）和伪cmos集成电路，并证明了TFTs和电路的成功运行。我们在制造过程中使用了点胶机和喷墨打印。我们使用了金属、半导体和绝缘体的溶液。制备的全溶液处理有机tft具有较高的电学性能。场效应迁移率超过1.0 cm2/Vs，开/关比超过105。此外，我们展示了室温可加工的溶液处理有机tft和集成电路，采用室温烧结纳米银颗粒油墨。制备的全溶液处理有机伪cmos逆变器即使在5 V的低电源电压下也能工作，具有良好的输入输出特性。所制备的3级假cmos环形振荡器在20 V电源电压下工作。输出波的周期为300hz。这一运算速度在全解决的有机集成电路中是相当高的。

We fabricated the fully-solution processed organic thin-filmtransistors (TFTs) and pseudo-CMOS integrated circuits and demonstrated those TFTs andcircuits were operated successfully. We used dispenser and ink-jet printing for thefabrication processes. We used solution of metal, semiconductor, and insulator. Fabricatedfully-solution processed organic TFTs exhibited high electrical performance. Field-effectmobility exceeded 1.0 cm2/Vs and on/off ratio exceeded 105. Furthermore, we demonstratedthe room-temperature processable solution-processed organic TFTs and integrated circuitsby using room-temperature sintering silver nanoparticle ink. Fabricatedfully-solutionprocessed organic pseudo-CMOS inverter was operated even at low supplyvoltage of 5 V with excellent input-output characteristics. The fabricated 3-stagepseudo-CMOS ring-oscillator was operated at supply voltage of 20 V. The output waveshows a period of 300 Hz. This operation speed is quite is quite high among thefully-solution processed organic integrated circuits.