DEVELOPMENT OF RF-CMOS SYSTEM FOR WIRELESS MULTI-MEDIA

近年来，射频CMOS电路因其性价比高，且与广泛使用的数字CMOS电路兼容而得到了广泛的发展。然而，CMOS的射频电路设计与传统的砷化镓电路相似，几乎只由n通道器件组成。在这项工作中，研究了由n通道和p通道器件组成的互补MOS电路，即真正的RF-CMOS电路。首先，我们设计并制造了CMOS器件。经过射频测量，设计了b类n /p通道CMOS推挽放大器，并通过射频仿真对其进行了评价。实验结果表明，CMOS推挽放大器的效率高于传统推挽放大器。其次，我们开发了尺寸更小、q因子中等的硅有源电感器。此外，还开发了硅射频开关。这两种器件都由硅mosfet组合而成。通过射频仿真对其射频性能进行了分析。在自对准阻挡层上，铝膜成功地沉积在相同的工艺室中，而没有破坏真空。发现铝膜有选择性地沉积在导电阻挡层上。我们发现以上结果表明可以设计全硅低成本RF- cmos功能电路块，从而导致用于无线终端的硅RF可编程器件。

Recently, RF-CMOS circuits are being developed intensively because of their cost-effectiveness, and compatibility to widely-used digital CMOS circuits. However, RF circuit design of CMOS is similar to the conventional GaAs circuits which almost consist of n-channel devices only.In this work, complementary MOS circuits which consist of both n- and p-channel devices, i.e., the real RF-CMOS circuits, have been investigated.At first, we have designed and fabricated CMOS devices. After RF measurement, Class-B n-/p-channel CMOS push-pull amplifier has been designed and evaluated by RF simulation. It is confirmed that the efficiency of CMOS push-pull amplifier is higher than that of conventional one.Next, we have developed the silicon active inductors with smaller size and medium Q-factor. Furthermore, silicon RF switches are also developed. Both devices consist of combination of silicon MOSFETs. RF performances are analyzed by using RF simulation.On the self-aligned barrier layer, aluminum films are successfully deposited in the same process chamber without breaking the vacuum. It is found that the aluminum films are selectively deposited on the conductive barrier layer.We have found that above results show that all-silicon low-cost RF-CMOS functional circuit blocks can be designed and this leads to silicon RF programmable devices for wireless terminals.