Fabrication of Multi Walled Carbon Nano-tube and the Low-Dimensional Transports

为了控制多壁碳纳米管的电性能，研究了高偏压应用对多壁碳纳米管（MWNT）的电破坏。为了通过电破坏来控制壁数，我们在纳米管中施加了多次高偏置电压。在每个过程之后，我们发现可以通过使用高偏压应用和适当的气氛控制进行电破坏来对壁进行稍微粗糙的控制。在强偏置电压的情况下，纳米管的壁数很难控制。我们已经在MWNT的双端电阻测量中观察到Tomonaga-Luttinger-Liquid类功率原始行为，但它不再适用于高偏置电压近似严重破坏后的输运。由于在上述情况下观察到变范围跳变特性，因此即使在室温下进行气氛控制，MWNT中也存在由于自加热和氧化引起的晶格缺陷而产生的某种无序态，这种无序态在非管中随机分布。

Electrical destruction has been investigated for electrical destruction of a multiwall carbon nanotube (MWNT) by a high bias application in order to control of the electrical property. In order to make a wall number control by the electrical destruction, we perfored to put many times application of high bias voltage into the nanotube. After each process, we found that a slightly rough control of the walls can be performed by means of an electrical destruction using high bias application together with an suitablle atmosphere control. In the case of a strong application of the high bias voltages, it is very difficult to control the wall number of the nanotube. We have observed Tomonaga-Luttinger-Liquid like power-raw behavior in the two-terminal measurement of the resistance of our MWNT, however it was no longer applicable for the transport after heavy destruction by high bias voltage approcation. Since variable range hopping characteristic has been observed in above cases, there exist a certine disordered state due to the lattice defects in a MWNT by self-heating and oxidation, which distributed randomly in the nonotube, even at performing atmosphere control at room temperature.