Development of Advanced Temperature Recording Device for Monitoring Irradiation Environment of Nuclear Power Reactor

对同一面辐照区和未辐照区试验SiC片进行了高达1200℃的温度历史监视器性能测试。使用3MeV He离子在室温下进行离子注入时，未辐照区被Cu网掩膜覆盖。受照区域因植入引起的位移损伤而膨胀。对辐照区和未辐照区进行了起泡行为比较。结果表明，透明起泡的起始温度与He的影响有关。当温度低到900℃时不会起泡，加热到900℃后也不会起泡。在本研究阶段，为了明确起泡行为的材料依赖性，除了之前使用的β - sic多晶外，还使用了晶粒边界影响较小且纯度更高的α - sic单晶。热解吸光谱分析表明，SiC中有晶界和无晶界的氦释放量差异不显著。结果表明，在温度范围内，基材的结晶度一般不影响起泡行为，而体积变化和剥落现象明显。根据对温度的依赖性和He离子注入对表面剥离影响的研究结果，提出了在570keV和1.7MeV条件下，在室温下He离子注入制备的β - sic多晶微网阵列在0.5~1.2 × 10^<22 b> ions/m^2的影响下，具有监测300 ~ 1000C温度范围的能力。

Performance tests of the temperature history monitor up to 1200C have been carried out for the trial SiC pieces, which have irradiated area and un-irradiated area in the same face. The un-irradiated area was covered by Cu mesh mask when ion implantation was conducted using 3MeV He ion at room temperature. The irradiated area swelled by displacement damage due to implantation. Blistering behavior of the irradiated area was compared to that of the un-irradiated area.It was found that the starting temperature of clear blistering depended on He fluences. When the fluence was as low as blistering never occur until 900C, blistering will not occur subsequent heating up to 900C. In this research period, to clarify material dependence of blistering behavior, single crystal of alpha-SiC was utilized which had less effect of grain-boundary and higher purity in addition to previous used beta-SiC poly-crystals. Thermal desorption spectroscopy analysis of helium release showed no significant differences between with and without grain boundary in the SiC. It was concluded that crystallinity of base material did not generally affect blistering behaviors at the temperature range that volumetric changing and exfoliation occur significantly.From the obtained results of the dependence on temperature and on fluence of He ion implantation of surface exfoliation, it is proposed that micro-mesh arrays prepared on beta-SiC poly-crystals by He ion implantation at room temperature to the fluences of 0.5~1.2x10^<22>ions/m^2 using 570keV and 1.7MeV have capability to monitor the temperature ranging from 300 to 1000C.