Semi-Automatic Probe System

在摩尔和超越CMOS域中的新型器件遭受显著的电参数变化。此外，寿命期间的老化效应会增加故障的发生率，甚至传播无声或潜在故障。设计适当的策略来测试制造后的集成电路以及在现场被认为是必不可少的。为了提出有效的测试策略，必须对大量的被测电路（CUT）进行各种IC的详细表征，以捕获相关的统计数据。这种表征需要严格控制和宽范围的操作参数，例如电压和温度。为此，裸硅样品应在探针系统中自动表征。根据表征数据得出的器件模型，应提出制造测试策略并在硅中实现。这种策略应该适合商业生产以及现场测试。试验程序的检测能力应在受控环境中在整个参数范围内再次进行评价。除了良好的控制和筛选统计相关数量的CUT的能力，商业探针系统提供了一个可与商业芯片测试相媲美的设置，即它允许评估整个测试过程。由于参数表征和测试是主要关注点，因此强制温度范围很广。为此，需要专用的空气干燥设备，因为当地设施不提供适合低温的加压空气。其他重要特性是能够处理典型的全尺寸300 mm晶圆以及较小的样品。后者是在亚琛工业大学和于利希研究中心的当地设施中进行后处理的结果。我们将从相邻的研究小组收到这些样品，用于我们的表征和评估工作。与探测器一起，器件参数分析仪是表征单个器件特性所必需的。它还提供精确的电压控制，包括注入电流的测量。此外，需要用于接触器件的微探针。

Novel devices in the more-Moore and beyond-CMOS domain suffer significant electrical parameter variation. Furthermore, aging effects during lifetime can increase the occurrence and even propagate silent or latent faults. Designing proper strategies for testing ICs after manufacturing as well as in field is considered essential. In order to propose efficient test strategies, detailed characterization of various ICs have to be performed over a large number of Circuits-Under-Test (CUT) to capture relevant statistical data. Such characterization requires a tightly controlled and wide range of operating parameters, such as voltage and temperature. For this effort bare silicon samples shall be automatically characterized in a probe system. Based on device models resulting from the characterization data, manufacturing test strategies shall be proposed and realized in silicon. Such strategies should be suitable of commercial manufacturing as well as in-field testing. The detection capability of test procedures shall be evaluated again in a controlled environment across the full range of parameters. Besides good control and capability of screening a statistical relevant number of CUT, the commercial probe system provides a setup comparable to commercial chip testing, i.e. it allows assessment of the full test procedure.To support this research, a semi-automatic probe system is applied for. As parametric characterization and test is the prime focus, a wide range of forced temperatures is compulsory. For this purpose, dedicated air-drying equipment is required as the local facilities don’t provide pressurized air suitable for low temperatures. Additional important features are the capability to handle typical full-scale 300mm wafers as well as smaller samples. The latter result from postprocessing in local facilities of the RWTH Aachen and the research center Jülich. We will receive such samples from adjoint research groups for our characterization and evaluation efforts. Together with the prober, a device parameter analyzer is necessary for characterization of individual device properties. It also provides precise control of voltages including measurement of injected currents. Furthermore, microprobes for contacting the devices are required.