Tomography measurement and arbitrary optical control of single electron spin state in semiconductor quantum dot

我们阐明，V型三能级结构，它允许光子态转移，任意的光学控制和光学层析测量的电子自旋态，可以形成通过测量的g因子的电子和空穴估计从光激发发射光谱的磁场依赖性的中性和带电的GaAs/AlGaAs量子点嵌入在一个光学腔中。

We clarified that the V-typed three-level energy structure, which allows photonic state transfer, arbitrary optical control and optical tomography measurement of an electron spin state, can be formed by the measurement of g-factor of an electron and a hole estimated from the magnetic-field dependence of optically excited emission spectra of a neutral and charged exciton in a single GaAs/AlGaAs quantum dot embedded in an optical cavity.