Research on Resist for X-ray and E-B Total Dry Vacuum Lithography

结果表明，真空光刻技术将应用于亚微米级大规模集成电路器件和x射线掩模的制作。通过形成含锡等离子体聚合MMA，可以很容易地提高x射线灵敏度。在含锡的等离子体聚合MMa表面形成亚微米图案。在等离子体聚合电阻中加入少量的锡或硅等金属，可以获得氧反应离子腐蚀的抗性。在x射线照射下诱导金属选择性掺入抗蚀剂中，发现氧反应离子刻蚀下的单层抗蚀剂工艺可以实现精细图案的形成。采用等离子体聚合碳氢化合物单体和蒸发作为x射线吸收剂的金-碳混合膜（Au-C）同时沉积。在金碳混合薄膜上成功制备了亚微米线和空间图案。采用等离子体气相沉积法制备了高透明度的B-C-N薄膜，薄膜的拉伸应力为0.8 ~ 6.5x10^9 dyn/cm^2。研制了具有电子束描绘功能的扫描电子显微镜，并将其安装在带有旋转机械设备的四个独立真空室之一中，用于电子束真空光刻工艺。研制了锥型钼靶x射线源。用酒精蒸发热冷却的靶材容易获得较大的x射线通量。研制了双双路激光干涉薄膜厚度计。实现了1nm的分辨率。采用紫外曝光等离子蚀刻技术进行抗蚀剂的干燥显影。开发了利用云纹衍射的掩模对准技术，实现了10nm的分辨率。

It was demonstrated that the vacuum lithography process will be applied for submicron LSI devices and X-ray mask fabrications.Enhancement of X-ray sensitivity was easily attained by forming Sn containing plasma polymerized MMA. Submicron pattern was formed on Sn containing plasma polymerized MMa. It was also found that the resistance of oxygen reactive ion etching could be obtained by incorporating a few % metals such as Sn or Si atoms into plasma polymerized resists. By inducing the selective incorporation of metals into resist under X-ray exposure, it was found to be clear that the formation of fine pattern could be realized by single layer resist process under oxygen reactive ion etching. Gold-carbon mixture film (Au-C) was deposited simultaneouslly by using plasma polymerization of hydrocarbon monomer and evaporation of gold as an X-ray absorber. Submicron line and space pattern was successfully fabricated on gold-carbon mixture film. As an X-ray membrane, the high transparent B-C-N film was formed by plasma CVD with the tensile stress of 0.8-6.5x10^9 dyn/cm^2.Scanning electron microscope with a function of electron beam delineation was developed and installed in one of four separate vacuum chambers with a rotation mechanical equipment for electron beam vacuum lithography processes. X-ray source with a cone type Mo target was developed. The large X-ray flux was easily obtained for the target cooled by evaporation heat of alcohol for target cooling. Film thickness meter using double twin path laser interference was developed. The resolution of 1nm was realized. Plasma etching under VUV exposure was developed for a dry development of resist. mask alignment technology using moire diffraction was developed and the resolution of 10nm was realized.