The Synthesis of Titanium Diboride Film by a Reactive RF Ion Plating Method

This study to deposit < tib_2 > thin film on metal substrates at low temperature，140 C, by a new method whose system was combined with an ion plating method and a CVD one；Ti supplied to substrates by an RF ionplating method and B by a CVD method by the hydrogenreduction of < bcl_3 > . Source gas ratio [< h_2 > / < bcl_3 >] was more effective for the formation oftinanium compounds than any其他experimental条件。Titanium compound layers synthesized wereclassified into 8 patterns on their main composition identified by X-ray diffraction；type <I>, < tih_(1.924)>, type <II>, < tih_2 > and Ti, type <III>,Ti and < ti_2b_5 >，type <IV>,TiB and Ti, type <V>, < tib_2 > and < ti_3b_4 >, type <VI>, < ti_2b_5 > and TiB，type <VII>, < ti_2b_5 >和< tib_2 >, type <VIII>，< tib_2 > . The highest hardness of thelayers was about Hv=1400 <kgfmm^(-2)> obtained at a specimen oftype <V> . Generally，the cohearrency between the layers and aluminium substrate the best of all. After this，a mechanism for the formation of titanium borides by this method will be invesigated。

This study was attempted to deposit <TiB_2> thin film on metal substrates at low temperature, about 140゜C, by a new method whose system was combined with an ion plating Method and a CVD one ; Ti was supplied to substrates by an RF ionplating method and B by a CVD method by the hydrogen reduction of <BCl_3> . Source gas ratio [ <H_2> / <BCl_3> ] was more effective for the formation of tinanium compounds than any other experimental condition. Titanium compound layers synthesized were classified into eight patterns on their main composition identified by X-ray diffraction ; type <I> , <TiH_(1.924)> , type <II> , <TiH_2> and Ti, type <III> ,Ti and <Ti_2B_5> , type <IV> ,TiB and Ti, type <V> , <TiB_2> and <Ti_3B_4> , type <VI> , <Ti_2B_5> and TiB, type <VII> , <Ti_2B_5> and <TiB_2> , type <VIII> , <TiB_2> . The highest hardness of thelayers was about Hv=1400 <kgfmm^(-2)> obtained at a specimen of type <V> . Generally, the cohearrency between the layers and aluminium substrate was the best of all. After this, a mechanism for the formation of titanium borides by this method will be invesigated.