Semi-automatic vacuum waferprober system

基于新型二维(2D)材料的纳米电子器件越来越多地采用晶片规模的可扩展制造方法来制造。电子设备主席(ELD)正在积极研究2D材料，这些材料被集成到具有可扩展工艺的设备中，晶片尺寸最高可达200 mm。优化这些2D材料的生长和集成工艺需要能够在整个晶圆区域快速、可靠地表征器件和测试结构。真空中的表征也很重要，因为钝化层的无损伤沉积目前仍然很困难，钝化通常也会影响材料和器件的性能。因此，我们需要一种半自动真空晶片探测仪系统，用于非封装2D材料器件的电学表征，在这种系统中，可以通过高达300°C的真空退火有效地去除吸附物，而不会氧化2D材料。这需要&lt；10e4 mbar的高真空(在10e5 mbar范围内更好)。由于每个工艺步骤都会增加工艺引起的变异性、损坏或污染的风险，因此未封装器件的特性还允许通过一些最小的工艺步骤来尽可能快地验证生长和集成工艺。因此，可以在生长/集成和表征之间创建具有时间效率的循环，以有效且连续地改善材料和器件参数。然后，通过半自动测量，特别是分析晶片表面的空间变化，结果立即具有统计意义。我们计划为真空晶片探测机配备直流(DC)、高频(HF)、电容(CV)和脉冲测量设备，以满足各种设备的要求，如(高频)晶体管、记忆器件或传感器，我们有各种正在进行和计划中的项目。其中许多项目还瞄准了大面积实现(高达200 mm晶圆)，例如以器件阵列的形式。特别是在大规模阵列中制造的记忆器件，其开关行为受环境气氛的影响很大，真空下的测量允许在无湿度条件下进行可靠的表征，类似于最终的应用。在RWTH亚琛工厂，目前还没有半自动晶片探测仪提供如此重要的真空功能(与烘焙功能相耦合，最高可达300°C)，并且还可以在DC、RF、CV或脉冲条件下进行测量。

Nanoelectronic devices based on novel two-dimensional (2D) materials are increasingly fabricated with scalable manufacturing methods on wafer scale. The Chair of Electronic Devices (ELD) is actively researching 2D materials, which are integrated into devices with scalable processes over large areas up to 200 mm wafer size. Optimizing the growth and integration process of these 2D materials requires that devices and test structures can be characterized quickly and reliably over the entire wafer area. Characterization in vacuum is also important, since damage-free deposition of passivation layers is currently still difficult and the passivation often also influences the material and device properties. Therefore, we need a semi-automated vacuum wafer prober system for electrical characterization of unencapsulated 2D material devices, where adsorbates can be effectively removed by vacuum annealing up to 300 °C without oxidizing the 2D materials. This requires a high vacuum of <10e4 mbar (better in the 10e5 mbar range). Characterization of unencapsulated devices also allows growth and integration processes to be verified as quickly as possible with a number of minimal process steps, as each process step increases the risk of process-induced variability, damage, or contamination. Thus, time-efficient loops between growth/integration and characterization can be created to effectively and successively improve material and device parameters. The results are then immediately statistically meaningful by a semi-automatic measurement, in particular to analyze spatial variation on the wafer surface. We plan to equip the vacuum wafer prober with measuring devices for direct current (DC), high frequency (HF), capacitance (CV) and pulse measurements, so that the requirements of various types of devices are met, such as (high frequency) transistors, memristive devices or sensors for which we have various ongoing and planned projects. Many of these projects also aim at a large area realization (up to 200 mm wafer) e.g. in form of arrays of devices. Especially the memristive devices, which are to be fabricated in large scale arrays, are very much influenced in their switching behavior by the ambient atmosphere and a measurement under vacuum allows a reliable characterization under humidity free conditions, similar to the final application. At the RWTH Aachen site, there is currently no semi-automatic wafer prober that also offers this so important vacuum function (+ coupling with bakeout function up to 300 °C) and additionally has the possibility to perform measurements at DC, RF, CV or with pulses.