Facility for enabling low thermal budget Si/SiGe technologies

该项目旨在通过建立先进的半导体设备来提高澳大利亚的微纳米制造能力，并加强对一系列关键技术的研究，该设备可以在低热预算下沉积广泛的硅基薄膜。预计该设施将提供目前在澳大利亚无法获得的独特功能。预期成果包括：(i)开发CMOS集成电路上的3D集成方法，这将是人工智能、物联网和可穿戴设备快速增长的应用所必需的；（ii）厚电活性硅基薄膜，用于生物医学、电信、光子学和微机电系统。

This project aims to enhance Australian micro/nano fabrication capability and strengthen research across a range of key technologies by establishing an advanced state-of-the art semiconductor facility that enables deposition of wide range of silicon-based films at low thermal budget. The facility is expected to provide unique capabilities that are not currently available in Australia. The expected outcomes include: (i) development of 3D integration approaches on CMOS Integrated Circuit that will be necessary for the rapidly growing applications in Artificial Intelligence, Internet-of-Things, and Wearables; (ii) thick electrically active silicon-based films for Biomedical, Telecommunication, Photonics, and Micro Electro Mechanical Systems.