BONDING CHARACTERISTICS BETWEEN DIELECTRIC AND INSULATOR FOR THE FABRICATION OF MULTI-COMPONENT CERAMIC SUBSTRATES

研究了介质与玻璃之间的反应，研究了不同材料之间的粘接特性。PbO-SiO_2、PbO-B_2O_3和PbO-SiO_2-B_2O_3系统的介质和玻璃选用了PbO-SiO_2、PbO-B_2O_3和PbO-SiO_2-B_2O_3系统中的Pb(Mg_&lt；1/3&gt；Nb_&lt；2/3&gt；)O_3、Pb(Zr_&lt；0.53&gt；Ti_&lt；0.47&gt；)O_3和PbO-SiO_2-B_2O_3系统。电介质被烧结，并与玻璃发生反应。用扫描电子显微镜和电子探针分析了界面区域的微观结构，用X射线衍射仪对反应产物进行了鉴定。界面层在介电材料和玻璃之间形成了不同的微观结构，微观结构取决于介电材料和玻璃的化学成分。界面层是介电材料溶解到玻璃中形成新的化合物，当介电材料和化合物在玻璃中的溶解度较大时，化合物在界面的玻璃相中析出。当介质在玻璃中的溶解速度较小，化合物的溶解度较小时，玻璃会渗透到介质中，并在介质侧形成反应层。当两种化合物沉淀时，化合物的颗粒分布由其溶解度决定。在某些体系中，形成了由两种以上微结构组成的反应层。由于反应层中的介电/玻璃比和玻璃成分随深度变化，形成了复杂的微观结构。

Reaction between dielectrics and glasses was examined to investigate the characteristics of bonding between different materials. Pb(Mg_<1/3>Nb_<2/3>)O_3, Pb(Zr_<0.53>Ti_<0.47>)O_3, and Pb(Mg_<1/2>W_<1/2>)O_3 were selected for dielectrics and glasses in the PbO-SiO_2, PbO-B_2O_3, and PbO-SiO_2-B_2O_3 systems were used. The dielectrics were sintered and reacted with glasses. The microstructure at the interfacial region was examined by SEM and EPMA.The reaction products were identified with XRD.A Interfacial layr with various microstructures developed between dielectric and glass ; the microstructure was dependent on the chemical species of dielectric and glass. The interfacial layr was formed by the dissolution of dielectric into glass and the formation of new compounds.When the dielectric and compound had large solubility into glass, the compound precipitated in the glass phase at the interface. When the dissolution rate of dielectric into glass was small and the solubility of compound was small, glass penetrated into dielectric and formed a reaction layr in the dielectric side. When two compounds precipitated, the distribution of particles of compounds was determined by the solubility. In some systems, the reaction layr composed of more than two kinds of microstructures formed. The complex microstructure was developed, because the dielectric/glass ratio and glass composition varied with depth in the reaction layr.