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Charge-transfer mechanism and electronic properties of a new metallic Langumuir-Blodgett films

Charge-transfer mechanism and electronic properties of a new metallic Langumuir-Blodgett films
新型金属Langumuir-Blodgett薄膜的电荷转移机制和电子特性
批准号:
10640556
负责人:
IZUMI Mitsuru
金额:
$0.64万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1998
资助国家:
日本
项目状态:
已结题
起止时间:
1998 至 1999

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中文摘要
翻译
1.目前的调查员成功地制作了一部新的BEDO-TTF和钢酸金属Langmuir-Blodgett电影,在房间温度下显示了直流电的运转率100 S/cm。present molecular system forms bi-layer organization with upper stearic acid and lower BEDO-TTF layers leading the formation of charge-transfer complex as (BO)2イイD1+イエD1(RCOO-H).. OOCR)イイD1-1イエD1。从某种意义上说,这将成为一种不必要的方法,不需要附加长的二氢碳链,使电子活性分子增加额外的脂肪酸,从而增加稳定性。BEDO-TTF和苯乙烯酸的LB电影与1:1混合,以显示在低于120 K的温度下dc抵抗力的逻辑增加。作为对反向磁稳定下降到1.8 K的研究的结果,我们发现了负磁稳定,因此我们解释了脆弱本地的两个尺寸(2D)电子系统的特征。由Hikami等人开发的一个理论是应用于获得多个微观参数来实现当前单载波量子干扰现象的定量拟合。我们得到了表格抵抗力和Thouless长度的定量值,即温度的功能,其中二维电子系统在相干区域下的磨损本地化给出了一个证据。目前的LB电影不是超级导体,而是被归类为一种肮脏的金属,如图形GIC化合物和/或半导体超级晶格。本地化的抑制是对低温度电子地面状态的关键调查,即宏观尺度上具有零电阻的超导电性。
英文摘要
1. The present investigators have made a success to make a new metallic Langmuir-Blodgett films of BEDO-TTF and stearic acid showing the dc conductivity 100 S/cm at room temperature. The present molecular system forms bi-layer organization with upper stearic acid and lower BEDO-TTF layers leading the formation of charge-transfer complex as (BO)2ィイD1+ィエD1(RCOO-H..OOCR)ィイD1-1ィエD1. Consequently, it has become unnecessary neither to attach a long di-hydrocarbon chain to the electroactive molecule nor to put additional fatty acid to increase the stability.2. The LB films of BEDO-TTF and stearic acid with 1:1 mixing exhibit the logarithmic increase of the dc resistance with decreasing temperature below 120 K. As a result of the study of transverse magnetoresistance down to 1.8 K we found out the negative magnetoresistance, for which we interpreted the characteristics of the existence of weakly localized two-dimensional (2D) electronic system. A theory developed by Hikami et al. was applied to the quantitative fit to obtain several microscopic parameters govern the present single carrier quantum interference phenomena. We got the quantitative values of sheet resistance and Thouless length as a function of temperature which gives an evidence of the 2D electronic system with weal localization under the coherent regime.3. The present LB films are not superconducting but classified as a dirty metal as in graphite GIC compounds and/or semiconductor superlattice. The suppression of the localization is crucial to survey of low-temperature electronic ground state such as superconductivity with zero resistance in a macroscopic scale.
期刊论文(27)
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会议论文
M. Izumi: "Recent Progress in metallic Langmuir-Blodgett films based on TTF derivatives"Thin Solid Films. 327-329. 14-18 (1998)
M. Izumi:“基于 TTF 衍生物的金属 Langmuir-Blodgett 薄膜的最新进展”固体薄膜。
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H. Ohnuki: "ESR Properties of Langmuir-Blodgett Films based on BO and behenic acid"Thin Solid Films. 327-329. 458-460 (1998)
H. Ohnuki:“基于 BO 和山萮酸的 Langmuir-Blodgett 薄膜的 ESR 特性”固体薄膜。
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L. Vignau: "Conducting LB films based on BEDO-TTR/Behenic acid"Mol. Cryst. Lig. Cryst.. 322. 99-104 (1998)
L. Vignau:“基于 BEDO-TTR/山萮酸的导电 LB 薄膜”Mol。
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