"MODIFICATION OF MAGNETIC PROPERTIES OF ARTIFICIAL SUPERLATTICE BY HYDROGEN INJECTION"

氢可以很容易地注入到材料中，可以在原子晶格中自由迁移，能够与晶格缺陷发生相互作用，因此有望赋予材料新的功能。我们试图通过在人工晶格薄膜中注入氢来改善和改变其磁性能。我们利用分子束外延和射频磁控溅射设备制备了人工晶格薄膜，并对其磁性能与结构的关系进行了测量和研究。我们发现，外延生长的人工晶格薄膜在热处理的早期阶段就有磁性能改善的现象。这一现象尚未得到澄清，尽管这是可能的，因为Co原子周围晶格扭曲的弛豫和Co原子的重排改变了Co原子的电子状态。向人工晶格薄膜中注入氢气以证实这一现象。X射线衍射…的结构变化结果没有检测到更多的离子，但磁性发生了明显的变化。我们计划生产新的功能材料，目的是澄清人工晶格中注氢产生的磁性的动力学。利用我们最新研制的超精密电阻测量系统，可以对半导体和绝缘体的磁场进行测量，使研究得到更广泛的进展。我们还通过测量GMR和TMR薄膜的电磁特性，评估了AlN，CuN等比电阻的电阻变化。通过测量GMR和TMR薄膜的电磁特性，评估了界面变化和氢注入对形变弛豫的影响。结果表明，在室温下，GRM和TMR薄膜的磁电阻值均大于2%。随着注氢量的增加，Pd-Co人工晶格薄膜的易磁化轴由垂直于膜面转变为平行于膜面。这一结果支持了晶格畸变引起的磁各向异性。这对氢气注入开发新型功能材料的可能性具有重要意义。较少

Hydrogen is expected to give new function to the materials, because it can easily inject into the materials, can migrate freely through atomic lattice, and be able to make interaction with lattice defects. We attempted to improve and to change the magnetic properties by hydrogen injection into the artificial lattice films. We had formed artificial lattice films by MBE and rf magnetron sputtering apparatus and had surveyed and investigated the relation between the magnetic properties and the structure. We found out the phenomenon that magnetic properties of artificial lattice films of epitaxial growth were improved at early period stage of heat treatment. This phenomenon has not been clarified yet, although it is conceivable because the electron situation of the Co atom changed by the relaxation of lattice distortion around Co atom and re-arrangement of Co atoms. Hydrogen was injected to the artificial lattice films to confirm this phenomenon. The structural change by the X-ray diffract … More ion was not detected as a result, but the clear change was seen in the magnetic properties. We projected the production of new functional materials with the aim of clarifying the dynamics of the magnetic properties generated by hydrogen injection into the artificial lattice. By ultra accurate electrical resistance measuring system that we got newly, we were able to measure the semiconductor and the insulator in the magnetic field and to progress research more extensively. We also were able to evaluate the change of electric resistance of the specific resistance such as AlN, CuN.We evaluated the effect of the interface change and the distortion relaxation by the hydrogen injection, by measuring the electro-magnet characteristics of GMR and TMR films. As a result, we found over 2% of magnetoresistance value for GRM and TMR films in room temperature. The easy axis of magnetization of Pd-Co artificial lattice film is change into parallel from perpendicular to the film plane with the increase of injection quantity of hydrogen. This result supports the lattice distortion causes magnetic anisotropy. These are meaningful of the possibility of development of the new functional materials with the hydrogen injection. Less