new synthesis method of a compound semiconductor containing tellurium

提出了一种新的含六族元素S、Te、Se的化合物半导体的合成方法。这些化合物半导体具有很高的蒸气压。因此，要精确地控制材料的性能是很困难的，有必要开发一种新的合成方法，使化合物半导体能够在低温下合成。金属碲化物作为一种独特的半导体，在光学传感器件领域占有不可替代的地位。本研究的目的是建立一种新的方法，在200-500℃的温度下，通过有机金属化合物的热分解得到碲化物。碲化物是一种含硫化合物，从带隙和几何工程的角度来看，它在微电子传感器器件中引起了广泛的关注。对于CdTe/HgTe， CdTe/ZnTe等多组分碲化物，为了优化这些材料的功能，精确的成分和缺陷控制是必要的。目前的研究以碲化镉为对象材料，以一种有机金属化合物为原料。详细研究了溶液型碲化镉原料的制备方法。将溶液型原料自旋涂覆在基材上，以形成前驱体氧化膜。将前驱体氧化膜在氢气气氛中热处理后转化为金属碲化物。根据所开发的方法，可以精确控制碲化镉的化学计量，因为碲化镉的合成温度很低，组成原子几乎不能蒸发和扩散。为CdTe薄膜的工业化生产提供了必要的基础数据。本文建立了以碲化镉为模型材料合成含碲化合物半导体的新方法。关于PbTe的初步研究也有报道。

A new synthesis method of a compound semiconductor containing group VI elements S, Te, Se has been developed. These compound semiconductor has high vapor pressure. So it is difficult to control material properties precisely, and it is necessary to develop a new synthesis method which is enable to synthesize the compound semiconductor at low temperature.Metal tellurides occupy an indispensable position as a unique semiconductor which cannot replace it with silicon in the field of optical sensing devices. Apurpose of this study is establishment of the new synthesis method which gives a telluride at 200-500℃ by thermal decomposition of an organometalic compound. The telluride is a kind of a chalcogen compound and attracts big attention in microelectronic sensor devices from the viewpoint of band gap and/or geometry engineering. For multi component tellurides such as CdTe/HgTe, CdTe/ZnTe, the precise composition and defect controls are necessary in order to optimize these material functions.At present research CdTe was chosen as an object material, and an organometalic compound is used as raw materials. Apreparation method of solution-type raw materials of CdTe has been studied in detail. The solution-type raw materials are spin-coated on a substrate in order to form a precursor oxide film. The precursor oxide film was converted into a metal telluride by heat-treatment in hydrogen atmosphere. According to the developed method precise control of CdTe stoichiometry is enabled because CdTe is synthesized as low temperature as constituent atoms can hardly vaporize and diffuse. The fundamental data which are necessary for the industrialization of CdTe film production have been established.In this report the new synthesis method of compound semiconductors containing tellurium has been established using CdTe for a model material of telluride synthesis. And a preliminary study about PbTe has been also reported.