High-performance Organic Field-Effect Transistors Based on Monodisperse Glassy-Nematic Oligofluorenes
High-performance Organic Field-Effect Transistors Based on Monodisperse Glassy-Nematic Oligofluorenes
批准号:
16360011
负责人:
TSUTSUI Tetsuo
金额:
$8.9万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2004
资助国家:
日本
项目状态:
已结题
起止时间:
2004 至 2005
中文摘要
本研究的动机是确定影响单轴取向π共轭体系中空穴迁移率的因素。除了最近报道的单分散性低聚芴,热致液晶芴-噻吩低聚物的合成和表征的空穴迁移率使用场效应晶体管。为了系统地研究链长、分子聚集、取向序参量和场效应晶体管中接触电阻对空穴迁移率的影响,将一系列单分散共轭低聚物及其类似物制备成玻璃-非晶、多畴和单畴玻璃-非晶薄膜,并以七、十二碳二烯为材料制备场效应晶体管,F(Pr)5 F(MB)2和F(MB)10 F(EH)2以及聚芴。空穴迁移率进行了测量的设备,包括单畴和多畴玻璃化薄膜以及玻璃化非晶薄膜。在较低的温度下热退火,低聚芴更容易取向成单畴膜,导致比聚芴更高的R_<abs>。由于几何和能量的无序,双晶非晶薄膜具有最低的迁移率。单畴玻璃-SiO2-F(MB)10 F(EH)2膜的迁移率比玻璃-非晶膜提高800倍。在单畴薄膜中,场效应迁移率值由低聚芴的链长和聚芴的余辉长度决定。对于F(MB)10 F(EH)2,场效应迁移率为0.012 cm^2/Vs,开/关比为1.0×10^4。该迁移率值是相同器件结构中聚芴的两倍。它的结论是,单分散的玻璃基共轭低聚物具有很大的潜力,用于场效应晶体管,因为上级化学纯度,结构的均匀性和规律性,并易于加工成单轴排列的无缺陷的薄膜。
英文摘要
This study was motivated to identify factors affecting hole mobility in uniaxially oriented п-conjugated systems. In addition to the monodisperse oligofluorenes that have been reported recently, thermotropic liquid crystalline fluorene-thiophene oligomers were synthesized and characterized for hole mobility using field-effect transistors. Both series of monodisperse conjugated oligomers and their polymer analogues were prepared into glassy-amorphous, and polydomain and monodomain glassy-nematic films for a systematic study of the effects on hole mobility of chain length, molecular aggregation, orientational order parameter, and the contact resistance in a field-effect transistor.Field-effect transistors were fabricated using hepta- and dodecafluorenes, F(Pr)5F(MB)2 and F(MB)10F(EH)2, and a polyfluorene. Hole mobilities were measured for devices comprising monodomain and polydomain glassy-nematic films as well as glassy-amorphous films. Oligofluorenes were more readily aligned into monodomain films via thermal annealing at a lower temperature, resulting in a higher R_<abs> than polyfluorene. Glassy-amorphous films possess the lowest mobility of all because of the geometric and energetic disorder. The mobility of a monodomain glassy-nematic F(MB)10F(EH)2 film is enhanced over a glassy-amorphous film by a factor of 800. In monodomain films, the field-effect mobility value is determined by the oligofluorene's chain length and the polyfluorene's persistence length. For F(MB)10F(EH)2, the field-effect mobility was evaluated at 0.012 cm^2/Vs with an on/off ratio of 1.0×10^4. This mobility value is twice that of polyfluorene in the same device structure. It is concluded that monodisperse glassy-nematic conjugated oligomers hold great potential for use in field-effect transistors because of superior chemical purity, structural uniformity and regularity, and ease of processing into uniaxially aligned defect-free films.
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有機トランジスタ用有機半導体の現状と将来展望
有机晶体管用有机半导体的现状与未来展望
DOI:
--
发表时间:
2005
期刊:
応用物理 9
影响因子:
--
作者:
[T.Matsushima, K.Fujita, T.Tsutsui, T.Yasuda et al., T.Yasuda et al., H.Tanaka et al., T.Yasuda et al.]
通讯作者:
T.Yasuda et al.
Influence of contact barrier height on the characteristics of polymer field-effect transistors
接触势垒高度对聚合物场效应晶体管特性的影响
DOI:
--
发表时间:
2005
期刊:
Journal of Photopolymer Science and Technology 18
影响因子:
--
作者:
[T.Matsushima, K.Fujita, T.Tsutsui, T.Yasuda et al., T.Yasuda et al., H.Tanaka et al., T.Yasuda et al., T.Yasuda et al.]
通讯作者:
T.Yasuda et al.
ポリフルオレン及びその誘導体を用いた有機FETの作製
使用聚芴及其衍生物制备有机 FET
DOI:
--
发表时间:
2004
期刊:
電子情報通信学会技術研究報告 ED112
影响因子:
--
作者:
[H.Tanaka, T.Yasuda, K.Fujita, T.Tsutsui, 安田 剛, 安田 剛, T.Yasuda et al.]
通讯作者:
T.Yasuda et al.
Emergence of n-Type Characteristic of Conjugated Polymer Field-Effect Transistors with Calcium Source-Drain Electrodes
钙源漏电极共轭聚合物场效应晶体管n型特性的出现
DOI:
--
发表时间:
2004
期刊:
Japanese Journal of Applied Physics 43(11A)
影响因子:
--
作者:
[H.Tanaka, T.Yasuda, K.Fujita, T.Tsutsui, 安田 剛, 安田 剛, T.Yasuda et al., T.Yasuda et al., T.Yasuda et al., 安田 剛, 安田 剛, 安田 剛]
通讯作者:
安田 剛
DOI:
10.1021/cm048532s
发表时间:
2005-01
期刊:
Chemistry of Materials
影响因子:
8.6
作者:
[T. Yasuda;and Katsuhiko Fujita;T. Tsutsui;Y. Geng;and Sean W. Culligan;Shaw H. Chen]
通讯作者:
T. Yasuda;and Katsuhiko Fujita;T. Tsutsui;Y. Geng;and Sean W. Culligan;Shaw H. Chen
共 15 条
High efficiency polarization-sensitive organic photovoltaic devices
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批准号:18360011
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.09万
-
财政年份:2006
-
负责人:TSUTSUI Tetsuo
-
依托单位:
THE DESIGN OF MATERIALS FOR OLEDS ACCORDINGTO THE CONCEPT OF SIMPLE STRUCTURE MOLECULAR
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批准号:12450389
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$1.98万
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财政年份:2000
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负责人:TSUTSUI Tetsuo
-
依托单位:
Electroluminecent devices made of vacuum-deposition polymerzation
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批准号:06453156
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.9万
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财政年份:1994
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负责人:TSUTSUI Tetsuo
-
依托单位:
Control of Average pi-Conjugation Length in Main-Chain Conjugated Polymers Prepared via Soluble Precursor Route
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批准号:02650653
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.22万
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财政年份:1990
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负责人:TSUTSUI Tetsuo
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依托单位:
海外基金