Electronic structure of superconductive diamond and related materials : Band insulator-metal transition and superconductivity

我们用光电子能谱研究了掺硼(B)金刚石及其相关化合物的电子结构从半导体到金属转变的演化。软X射线角分辨光电子能谱揭示了重掺B超导金刚石的价带电子弥散。芯级光电子能谱表明，重掺硼和重磷的金刚石具有多个掺杂原子的化学位置。对于新的超导体CaC_6和K掺杂的苦品，直接观察到了由于嵌入和掺杂而在费米能级附近的电子结构的演化，这为深入了解超导的机制提供了线索。

We have investigated evolution of electronic structure across semiconductor to metal transition of boron(B)-doped diamond and its related compounds by using photoemission spectroscopy. Soft x-ray angle-resolved photoemission spectroscopy has revealed valence band electronic dispersions of heavily B-doped superconductive diamond. Core level photoemission spectroscopy has showed multiple chemical sites of dopant atoms for heavily B- and phosphorous-doped diamond. For new superconductors, CaC_6 and potassium doped picene, evolution of electronic structure near the Fermi level due to intercalation and doping, respectively, have been observed directly, which provide insight into the mechanism of the superconductivity.