Development of a short channel organic FET having high switching speed

本研究旨在通过改进器件结构，制备短沟道有机场效应晶体管（FET），使其具有从MHz到GHz的高开关速度。我们使用原始的扁平金属电极制作了底部接触型橡胶场效应管。由于单个栅极结构和减少接触电阻的努力，实现了寄生电容的降低，最大开关速度达到了6MHz。然而，由于我们的器件制造技术不足，实现仍然低于最初的期望值100MHz。我们试图找到一种湿法制备碳纳米管场效应管器件的工艺，使其具有与有机器件相似的优点。我们成功地用传统湿法在平面电极上制备了具有双极性特性的底部接触碳纳米管场效应管。

This study aimed to fabricate a short channel organic field effect transistor (FET), which will have high switching speed from MHz to GHz by improving the device structure. We fabricated bottom contact type ruburene FET using our original flattened metal electrodes. Maximum switching speed up to 6MHz has attained owing to decreased parasitic capacitance realized by an individual gate structure and effort to decrease the contact resistance. However, the attainment was still lower than initial desired value, 100MHz, because of our insufficient device fabrication technique. We have tried to find a wet process fabricate technique of carbon nanotube FET device, which will have similar advantage of organic devices. We successfully fabricated a bottom contact carbone nanotube FET on our flat electrodes showing ambipolar characteristics by a conventional wet process.