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Thermalization dynamics of high-density electron-hole systems involving Auger recombination processes

Thermalization dynamics of high-density electron-hole systems involving Auger recombination processes
涉及俄歇复合过程的高密度电子空穴系统的热化动力学
批准号:
21740227
负责人:
NAKA Nobuko
金额:
$2.75万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011

项目摘要

项目成果

相关文献

中文摘要
翻译
在高密度电子空穴系统中,多体相互作用,如俄歇复合过程,伴随着非辐射复合在确定载流子动力学中起着至关重要的作用。我们实验追求激子和自由载流子的热化动力学,通过使用光谱方法覆盖了很宽的光谱范围。我们成功地建立了纳秒时间分辨的回旋共振方法,探测了氧化物半导体中光激发激子产生的自由载流子,并发现了空位态自由激子和俘获激子之间的相关性。这使得有可能定量讨论自由载流子通过激子的两体碰撞的形成动力学。
英文摘要
In high-density electron-hole systems, many-body interactions such as an Auger recombination process which accompanies non-radiative recombination play an essential role in determining the carrier dynamics. We experimentally pursued thermalization dynamics of excitons and free carriers by using spectroscopic methods covering a wide spectral range. We have succeeded in establishing the nanosecond time-resolved cyclotron resonance method which probes free carriers produced by optically excited excitons in an oxide semiconductor, and find out correlation between the free and trapped excions at the vacancy state. This made it possible to quantitatively discuss formation dynamics of free carriers via two-body collisions of excitons.
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