Superconductivity of Heavily Boron-Doped Diamond and Ultrananocrystalline Diamond.

本研究的目的是探讨掺硼超非晶金刚石(UNCD)薄膜作为超导材料的可能性。在500~3.6K温度范围内测量了掺硼碳化锂的电导率。我们证实了UNCD的电导率随B掺杂量的增加而增加，并且在低于110K的温度下，由于掺硼UNCD薄膜表面的欧姆电极发生剥落而无法测得该值。欧姆电极与掺硼UNCd薄膜之间的结合强度可能随测量温度的不同而不同。因此，有必要寻找一种对掺硼碳化锂薄膜表面具有高附着力的电极材料。通过这个问题的解决，我们估计硼掺杂的UNCD的超导性质变得明显。我们继续这项研究。

The purpose of this study is to investigate the possibility as superconductive materials of boron doped ultrananocrystalline diamond (UNCD) thin films. The electrical conductivity of the boron doped UNCD was measured at the range of from 500K to 3.6K. We confirmed that the electrical conductivity of UNCD increased with the amount of doped boron, and the value was not possible to measure at the temperature of below 110K because of flaking of the ohmic electrode on the film surface of the boron doped UNCD. The adhesion strength of between the ohmic electrode and the boron doped UNCD thin films might be different depending on the value of measurement temperature. It is necessary to search for the electrode material that has high adhesion to film surface of boron doped UNCD. Through the solution of this problem, we estimate that the superconductive property of boron doped UNCD became apparent. We continue this study.