Study on the nonlinear characteristics in semiconductor nanowire three branch junction and its control

为了了解半导体三分支纳米线结(TBJ)器件的非线性电学特性的机理，我们研制了一种光致局域电导调制系统，并对该器件进行了表征。阐明了热电偶内部电导的不均匀分布导致了其非线性特性。为了实现与非门的应用，我们设计并制作了与非门和触发器电路，成功地实现了与非门和触发器的正确工作。我们已经将TBJ技术扩展到其他材料，如石墨烯和氧化锌。

In order to understand the mechanism of the nonlinear electric characteristics in the semiconductor-based three-branch nanowire junction (TBJ) device, we have developed a light-induced local conductance modulation system and characterized the device. We clarified that the non-uniform distribution of conductance inside the TBJ resulted in the nonlinear characteristics. For application of the TBJ, we designed and fabricated NAND gates and flip-flop circuits integrating the TBJ devices, and succeeded in their correct operation. We have extended the TBJ technology to other materials, such as graphene and ZnO.