Research for room temperature-amorphous alloy field effect transistor

在室温下测量了非晶合金FET在强磁场和外磁场中的Id-Vg特性。晶体管表现出周期为0.28 mV的单电子库仑振荡，在强磁场下周期为2.35 E-6 V的法布里-珀罗干涉，在Vg和磁场下分别为0.26 mV和0.2 T的Fano效应。由于室温下的差距能量比热能（25.6 meV）大265倍，因此这种有趣的现象并不违反基本原理。核磁共振、正电子湮没谱和中子散射研究表明，相邻二十面体团簇中Ni原子之间的H占位提供了一个独特的量子点隧穿模型。从标准的分子动力学计算出发，我们建立了一个非晶合金的局域结构模型。这些现象都可以用团簇的低维成分电荷密度波来排除，在团簇中原子沿[130]方向沿着成链排列。

The Id-Vg characteristics of an amorphous alloy FET were measured in nonmagnetic and magnetic fields at room temperature. The transistor reveals one-electron Coulomb oscillation with period of 0.28 mV, Fabry-Perot interference with period of 2.35 E-6 V in nonmagnetic field, and Fano effect with period of 0.26 mV for Vg and 0.2 T for magnetic field. Since the gap energy is 265 times larger than thermal energy (25.6 meV) at room temperature, this intriguing phenomenon does not violate an essential principle. NMR, positron annihilation spectroscopy and neutron scattering studies show that H occupation between Ni atoms of neighboring icosahedral clusters provides a distinct model of quantum dot tunneling. From standard MD calculation, we construct a local structural model for amorphous alloys. These phenomena could be excluded by charge density waves that the low-dimensional component of clusters, in which the atoms are lined up in chains along the [130] direction.