Development of solid-state lasers fabricated with laminated p- and n-type organic semiconductor crystals, and analysis of their emission mechanism

在本研究中，我们开发了一种新的观测系统，并对器件结构进行了改进，以期将来实现指示电流注入激光振荡的有机半导体器件。所构建的系统能够在频率超过100 kHz的交流电压的作用下，详细地测量流过器件的电流和器件的光发射的时间变化。在下列器件中实现了明亮的光发射或光谱窄的发射：(I)p型和n型有机材料都用作发射层。(2)无机半导体与有机晶体结合。(3)在栅绝缘层上刻制衍射栅。(4)在器件中安装了双栅电极。

In the present studies, development of a new observation system and improvement of device structures have been carried out for a future realization of the organic semiconductor devices that indicate current-injected laser oscillations. The constructed system enables elaborated measurements of time variations of both currents flowing in the device and light emissions from that device under application of alternating current voltages having frequencies over 100 kHz.Organic light-emitting field-effect transistors were chosen for a target device. Bright light emissions or spectrally-narrowed emissions were achieved in the following devices: (i) Both p- and n-type organic materials were used for an emitting layer. (ii) Inorganic semiconductors were combined with organic crystals. (iii) Diffraction gratings were engraved on gate insulator layers. (iv) Dual gate electrodes were incorporated into the devices.