Making of Dirac Fermion Systems using Semiconductor Superstructures

本研究的目的是在半导体横向超晶格结构中实现二维无质量狄拉克费米子系统。作为第一步，我们尝试用重构的能带结构来实现二维Bloch电子系统。制备了具有横向调制栅电极的GaAs/AlGaAs FET器件。在ZEP栅绝缘层上制作了典型周期为60- 80 nm的孔阵列。实验结果没有显示出带重构的迹象。数组的随机性是特性中的一个问题。

The purpose of this research was to realize the 2D massless Dirac fermion system in the semiconductor lateral superlattice structure. As the first step, we have tried to realize the2D Bloch electron system with the reconstructed mini-band structure. We prepared the GaAs/AlGaAs FET devices with the laterally modulated gate electrode. The array of holes are fabricated on the ZEP gate insulating layer with the typical period of 60-80nm. The experimental results have not shown the sign of the band-reconstruction. The randomness of the array is an issue in the feature.