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First-principles electronic structure calculation of topologically disordered systems

First-principles electronic structure calculation of topologically disordered systems
拓扑无序系统的第一性原理电子结构计算
批准号:
23654133
负责人:
AKAI Hisazumi
金额:
$2.33万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2012

项目摘要

项目成果

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中文摘要
翻译
提出了两种从第一性原理出发计算具有拓扑无序体系的电子结构的方法。一种适用于具有弱拓扑无序的系统,例如具有冻结声子的晶体。另一种适用于具有较强拓扑无序的系统。非晶态金属和液态金属是后者的例子。用前者成功地计算了电子-声子散射对电导率的影响。对于后者,阐明了电子格林函数中出现的各种奇异性,并研究了避免奇异性的方法。
英文摘要
Two methods that enable us to calculate the electronic structure of systems with topological disorder from first-principles are developed. One is suitable for systems that have weak topological disorder such as crystals with frozen phonons. The other is for systems with strong topological disorder. Amorphous and liquid metals are the examples of the latter. Using the former, the effects of the electron-phonon scattering on the electrical conductivity are successfully calculated. For the latter various singularities arising in the electron Green’s function have been clarifies and the method to avoid them are investigated.
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First-principles calculation of transport properties of half-metallic systems
半金属体系输运性质的第一性原理计算
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [M. Ogura, N.H. Long, and H. Akai]
通讯作者: and H. Akai
First-principles calculation of transport properties of half-metallic system
半金属体系输运性质的第一性原理计算
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [M. Ogura, N. H. Long and H. Akai]
通讯作者: N. H. Long and H. Akai
FFirst-principles calculation of the magnetic and transport properties of La1-xCaxMnO3
La1-xCaxMnO3 磁性和输运性质的第一性原理计算
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Hironori Hoshino, Shin Nakamura, Y. Hatsugai, M. Ogura and H. Akai]
通讯作者: M. Ogura and H. Akai
Effects of spin-wave excitation in half-metallic materials
自旋波激发对半金属材料的影响
DOI: --
发表时间: 2012
期刊: Physical Review B
影响因子: 3.7
作者: [N.H. Long, M. Ogura, and H. Akai]
通讯作者: and H. Akai
共 14 条
    Development of true-DMFT -first principles calculation of Mott transition-
    Half-metallic diluted antiferromagnetic semiconductors
    • 批准号:
      17340095
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $3.83万
    • 财政年份:
      2005
    • 负责人:
      AKAI Hisazumi
    • 依托单位:
    Development and application of the order-N full-potential KKR-Green's function method
    • 批准号:
      17064008
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $26.3万
    • 财政年份:
      2005
    • 负责人:
      AKAI Hisazumi
    • 依托单位:
    Magnetism and transport properties of super-structure of diluted magnetic semiconductors
    • 批准号:
      13640330
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.24万
    • 财政年份:
      2001
    • 负责人:
      AKAI Hisazumi
    • 依托单位:
    海外基金